Inventor
Niefeng Sun
Inventor
Hebei, CN
Overview
Patents· 3 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth29%
B01FMixing, e.g. dissolving, emulsifying or dispersing14%
C01BNon-metallic elements14%
G06FElectric digital data processing14%
H04LTransmission of digital information, e.g. telegraphic communication14%
H04WWireless communication networks14%
PatentTitleYear
10,885,178Methods and devices for generating security questions and verifying identities202110,648,100Method for carrying out phosphide in-situ injection synthesis by carrier gas202010,519,563Device and method for continuous VGF crystal growth through rotation after horizontal injection synthesis2019Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2019–2020Patents assigned to THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION (2)· patent assignee history
2019–2020Based in Hebei, CN· patent location history
2021Patents assigned to ADVANCED NEW TECHNOLOGIES CO LTD (1)· patent assignee history
2021Based in Hangzhou, CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION | 2 | 2019–2020 |
| ADVANCED NEW TECHNOLOGIES CO LTD | 1 | 2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hebei, CN | 2 | 2019–2020 |
| Hangzhou, CN | 1 | 2021 |