Inventor

Shankar Venkataraman

Inventor

Santa Clara, CA, US

Overview

2002–2020

Patent span

Electricity

Primary field (CPC H)

Patents· 100 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1026%

C23CCoating metallic material22%

H01JElectric discharge tubes or discharge lamps14%

H01LSemiconductor devices10%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%

Y10TTechnical subjects covered by former us classification3%

H10DInorganic electric semiconductor devices2%

F02MSupplying combustion engines in general with combustible mixtures or constituents thereof1%

B05BSpraying apparatus1%

PatentTitleYear

10,550,472Flow control features of CVD chambers2020 10,468,285High temperature chuck for plasma processing systems2019 10,424,485Enhanced etching processes using remote plasma sources2019 10,354,843Chemical control features in wafer process equipment2019 10,319,649Optical emission spectroscopy (OES) for remote plasma monitoring2019 10,283,321Semiconductor processing system and methods using capacitively coupled plasma2019 10,256,079Semiconductor processing systems having multiple plasma configurations2019 10,170,282Insulated semiconductor faceplate designs2019 10,113,236Batch curing chamber with gas distribution and individual pumping2018 10,032,606Semiconductor processing with DC assisted RF power for improved control2018 9,991,134Processing systems and methods for halide scavenging2018 9,978,564Chemical control features in wafer process equipment2018 9,773,695'Integrated bit-line airgap formation and gate stack post clean'2017 9,728,437'High temperature chuck for plasma processing systems'2017 9,704,723'Processing systems and methods for halide scavenging'2017 9,659,792'Processing systems and methods for halide scavenging'2017 9,496,167'Integrated bit-line airgap formation and gate stack post clean'2016 9,449,850'Processing systems and methods for halide scavenging'2016 9,406,523'Highly selective doped oxide removal method'2016 9,404,178'Surface treatment and deposition for reduced outgassing'2016 9,378,978'Integrated oxide recess and floating gate fin trimming'2016 9,373,517'Semiconductor processing with DC assisted RF power for improved control'2016 9,362,130'Enhanced etching processes using remote plasma sources'2016 9,285,168'Module for ozone cure and post-cure moisture treatment'2016 9,209,012'Selective etch of silicon nitride'2015 9,184,055'Processing systems and methods for halide scavenging'2015 9,153,442'Processing systems and methods for halide scavenging'2015 9,144,147'Semiconductor processing system and methods using capacitively coupled plasma'2015 9,132,436'Chemical control features in wafer process equipment'2015 9,093,371'Processing systems and methods for halide scavenging'2015 9,086,041'Fuel injector having a piezoelectric actuator and a sensor assembly'2015 9,023,732'Processing systems and methods for halide scavenging'2015 8,956,980'Selective etch of silicon nitride'2015 8,894,767'Flow control features of CVD chambers'2014 8,863,727'Piezoelectric fuel injector system, method for estimating timing characteristics of a fuel injection event'2014 8,855,197'Method and apparatus for aligning IDR frames in transcoded multi-bitrate video streams'2014 8,775,744'Simultaneous switching of multiple time slots in an optical network node'2014 8,759,223'Double patterning etching process'2014 8,741,788'Formation of silicon oxide using non-carbon flowable CVD processes'2014 8,716,154'Reduced pattern loading using silicon oxide multi-layers'2014 8,664,127'Two silicon-containing precursors for gapfill enhancing dielectric liner'2014 8,629,067'Dielectric film growth with radicals produced using flexible nitrogen/hydrogen ratio'2014 8,569,166'Methods of modifying interlayer adhesion'2013 8,524,004'Loadlock batch ozone cure'2013 8,497,211'Integrated process modulation for PSG gapfill'2013 8,476,142'Preferential dielectric gapfill'2013 8,466,067'Post-planarization densification'2013 8,435,902'Invertable pattern loading with dry etch'2013 8,329,587'Post-planarization densification'2012 8,304,351'In-situ ozone cure for radical-component CVD'2012 8,236,708'Reduced pattern loading using bis(diethylamino)silane (C8H22N2Si) as silicon precursor'2012 8,153,348'Process sequence for formation of patterned hard mask film (RFP) without need for photoresist or dry etch'2012 8,114,761'Method for doping non-planar transistors'2012 8,012,887'Precursor addition to silicon oxide CVD for improved low temperature gapfill'2011 7,994,019'Silicon-ozone CVD with reduced pattern loading using incubation period deposition'2011 7,960,294'Method of modifying interlayer adhesion'2011 7,935,643'Stress management for tensile films'2011 7,902,080'Deposition-plasma cure cycle process to enhance film quality of silicon dioxide'2011 7,674,727'Nitrous oxide anneal of TEOS/ozone CVD for improved gapfill'2010 7,654,224'Method and apparatus for cleaning a CVD chamber'2010 7,570,643'Efficient framing procedure for variable length packets'2009 7,563,728'Methods of modifying interlayer adhesion'2009 7,528,051'Method of inducing stresses in the channel region of a transistor'2009 7,506,654'Accelerated plasma clean'2009 7,500,445'Method and apparatus for cleaning a CVD chamber'2009 7,465,357'Computer-readable medium that contains software for executing a method for cleaning a CVD chamber'2008 7,464,717'Method for cleaning a CVD chamber'2008 7,431,967'Limited thermal budget formation of PMD layers'2008 7,334,741'Fuel injector with injection rate control'2008 7,226,876'Method of modifying interlayer adhesion'2007 7,213,178'Method and system for transporting faults across a network'2007 7,200,460'Method of depositing low dielectric constant silicon carbide layers'2007 7,176,105'Dielectric gap fill with oxide selectively deposited over silicon liner'2007 7,153,787'CVD plasma assisted lower dielectric constant SICOH film'2006 7,151,053'Method of depositing dielectric materials including oxygen-doped silicon carbide in damascene applications'2006 7,141,483'Nitrous oxide anneal of TEOS/ozone CVD for improved gapfill'2006 7,087,497'Low-thermal-budget gapfill process'2006 7,033,945'Gap filling with a composite layer'2006 6,946,033'Heated gas distribution plate for a processing chamber'2005 6,943,127'CVD plasma assisted lower dielectric constant SICOH film'2005 6,932,092'Method for cleaning plasma enhanced chemical vapor deposition chamber using very high frequency energy'2005 6,923,189'Cleaning of CVD chambers using remote source with cxfyoz based chemistry'2005 6,918,012'Streamlined cache coherency protocol system and method for a multiple processor single chip device'2005 6,913,992'Method of modifying interlayer adhesion'2005 6,902,629'Method for cleaning a process chamber'2005 6,890,850'Method of depositing dielectric materials in damascene applications'2005 6,874,014'Chip multiprocessor with multiple operating systems'2005 6,855,484'Method of depositing low dielectric constant silicon carbide layers'2005 6,824,081'Needle controlled fuel injector with two control valves'2004 6,814,087'Accelerated plasma clean'2004 6,797,643'Plasma enhanced CVD low k carbon-doped silicon oxide film deposition using VHF-RF power'2004 6,709,721'Purge heater design and process development for the improvement of low k film properties'2004 6,591,850'Method and apparatus for fluid flow control'2003 6,537,733'Method of depositing low dielectric constant silicon carbide layers'2003 6,495,233'Apparatus for distributing gases in a chemical vapor deposition system'2002 6,486,082'CVD plasma assisted lower dielectric constant sicoh film'2002 6,413,583'Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound'2002 6,387,207'Integration of remote plasma generator with semiconductor processing chamber'2002 6,379,492'Corrosion resistant coating'2002 6,374,831'Accelerated plasma clean'2002

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2002–2020Patents assigned to APPLIED MATERIALS INC (90)· patent assignee history

2002–2020Based in Santa Clara, CA, US· patent location history

2004–2015Based in Columbus, IN, US· patent location history

2005–2014Based in Cupertino, CA, US· patent location history

2006–2014Based in Sunnyvale, CA, US· patent location history

2011–2019Based in San Jose, CA, US· patent location history

2012–2019Patents assigned to VENKATARAMAN SHANKAR (23)· patent assignee history

2012–2016Patents assigned to INGLE NITIN K (6)· patent assignee history

2012–2016Patents assigned to LIANG JINGMEI (5)· patent assignee history

2012–2014Patents assigned to GEE PAUL EDWARD (4)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
APPLIED MATERIALS INC	90	2002–2020
VENKATARAMAN SHANKARself	23	2012–2019
INGLE NITIN K	6	2012–2016
LIANG JINGMEI	5	2012–2016
GEE PAUL EDWARD	4	2012–2014

Locations

Location	Patents	Span
Santa Clara, California, US	46	2002–2020
San Jose, California, US	42	2011–2019
Columbus, IN, US	4	2004–2015
Cupertino, California, US	2	2005–2014
Sunnyvale, California, US	2	2006–2014