Inventor
Hisayuki Saito
Inventor
Shirakawa, JP
Overview
Patents· 6 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1026%
G01NInvestigating or analysing materials by determining their chemical or physical properties16%
C30BSingle-crystal growth11%
G01BMeasuring length, thickness or similar linear dimensions11%
H01LSemiconductor devices11%
G01DMeasuring not specially adapted for a specific variable5%
G01RMeasuring electric variables5%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices5%
H10DInorganic electric semiconductor devices5%
Y10TTechnical subjects covered by former us classification5%
PatentTitleYear
10,983,158Method for evaluating crystal defects202110,345,102Method for evaluating warpage of wafer and method for sorting wafer201910,234,281Method for evaluating haze20199,337,013'Silicon wafer and method for producing the same'20168,111,081'Method for evaluating silicon wafer'20127,718,446'Evaluation method for crystal defect in silicon single crystal wafer'2010Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2010–2021Patents assigned to SHINETSU HANDOTAI KK (6)· patent assignee history
2010Based in Fukushima, JP· patent location history
2012–2016Patents assigned to SAITO HISAYUKI (2)· patent assignee history
2012–2016Based in Nishishirakawa, JP· patent location history
2016Patents assigned to FUSEGAWA IZUMI (1)· patent assignee history
2016Patents assigned to HOSHI RYOJI (1)· patent assignee history
2016Patents assigned to SONOKAWA SUSUMU (1)· patent assignee history
2019–2021Based in Shirakawa, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SHINETSU HANDOTAI KK | 6 | 2010–2021 |
| SAITO HISAYUKIself | 2 | 2012–2016 |
| FUSEGAWA IZUMI | 1 | 2016 |
| HOSHI RYOJI | 1 | 2016 |
| SONOKAWA SUSUMU | 1 | 2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Shirakawa, JP | 3 | 2019–2021 |
| Nishishirakawa, JP | 2 | 2012–2016 |
| Fukushima, JP | 1 | 2010 |