Inventor

Sudhama C. Shastri

Inventor
Phoenix, AZ, US

Overview

24→
Patents
2006–2018
Patent span
Electricity
Primary field (CPC H)

Patents· 24 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices37%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1025%
H01LSemiconductor devices8%
H03HImpedance networks, e.g. resonant circuits8%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7%
H01FMagnets5%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
H05BElectric heating2%
Y02BClimate change mitigation technologies related to buildings, e.g. housing, house appliances or related end-user applications2%
PatentTitleYear
10,109,718Method for manufacturing a semiconductor device20189,646,951'Method of forming a semiconductor device and structure therefor'20179,419,069'Method of manufacturing a semiconductor component and structure'20169,041,294'Semiconductor component and method'20158,999,807'Method for manufacturing a semiconductor component that includes a common mode choke and structure'20158,766,401'Method of manufacturing a semiconductor component and structure'20148,723,264'Electrostatic discharge devices and method of making the same'20148,410,578'Method of manufacturing a semiconductor component and structure'20138,309,422'Low clamp voltage ESD method'20128,222,115'Method of forming a high capacitance diode'20128,188,572'Integrated semiconductor device'20128,143,701'Method of forming a high capacitance diode and structure therefor'20127,981,757'Semiconductor component and method of manufacture'20117,955,941'Method of forming an integrated semiconductor device and structure therefor'20117,842,969'Low clamp voltage ESD device and method therefor'20107,829,426'Semiconductor component and method of manufacture'20107,666,751'Method of forming a high capacitance diode and structure therefor'20107,602,027'Semiconductor component and method of manufacture'20097,589,392'Filter having integrated floating capacitor and transient voltage suppression structure and method of manufacture'20097,579,632'Multi-channel ESD device and method therefor'20097,579,670'Integrated filter having ground plane structure'20097,466,212'Semiconductor filter structure and method of manufacture'20087,276,425'Semiconductor device and method of providing regions of low substrate capacitance'20076,984,860'Semiconductor device with high frequency parallel plate trench capacitor structure'2006

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2006–2015Patents assigned to SEMICONDUCTOR COMPONENTS IND (20)· patent assignee history
2006–2018Based in Phoenix, AZ, US· patent location history
2012–2015Patents assigned to SHASTRI SUDHAMA C (9)· patent assignee history
2012–2015Patents assigned to MARREIRO DAVID D (7)· patent assignee history
2012–2014Patents assigned to ETTER STEVEN M (2)· patent assignee history
2016–2018Patents assigned to SEMICONDUCTOR COMPONENTS IND LLC (3)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SEMICONDUCTOR COMPONENTS IND202006–2015
SHASTRI SUDHAMA Cself92012–2015
MARREIRO DAVID D72012–2015
SEMICONDUCTOR COMPONENTS IND LLC32016–2018
ETTER STEVEN M22012–2014
Locations
LocationPatentsSpan
Phoenix, AZ, US242006–2018