Inventor
John E. Northrup
Inventor
Palo Alto, CA, US
Overview
Patents· 35 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Sprimary
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light23%
H10HInorganic light-emitting semiconductor devices having potential barriers21%
B82YSpecific uses or applications of nanostructures18%
H01LSemiconductor devices11%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
H10DInorganic electric semiconductor devices8%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
H10KOrganic electric solid-state devices2%
B41JTypewriters1%
C08GMacromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds1%
PatentTitleYear
10,249,793Transparent electron blocking hole transporting layer201910,164,146P-side layers for short wavelength light emitters201810,153,616Electron beam pumped vertical cavity surface emitting laser201810,008,629Ultraviolet light emitting devices having compressively strained light emitting layer for enhanced light extraction20189,960,355Organic polymer semiconductors with increased interdomain connectivity and mobility20189,882,089'Transparent electron blocking hole transporting layer'20189,705,288'Electron beam pumped vertical cavity surface emitting laser'20179,660,134'Nitride semiconductor polarization controlled device'20179,419,194'Transparent electron blocking hole transporting layer'20169,401,452'P-side layers for short wavelength light emitters'20169,252,329'Ultraviolet light emitting devices having compressively strained light emitting layer for enhanced light extraction'20169,219,189'Graded electron blocking layer'20159,124,062'Optically pumped surface emitting lasers incorporating high reflectivity/bandwidth limited reflector'20159,112,332'Electron beam pumped vertical cavity surface emitting laser'20159,112,331'Surface emitting laser incorporating third reflector'20158,964,796'Structure for electron-beam pumped edge-emitting device and methods for producing same'20158,430,705'Self assembly of field emission tips by capillary bridge formations'20138,330,144'Semi-polar nitride-based light emitting structure and method of forming same'20128,247,249'Semi-polar nitride-based light emitting structure and method of forming same'20128,059,975'Flexible diagnostic sensor sheet'20118,048,703'Light emitting devices with inhomogeneous quantum well active regions'20117,723,719'Light emitting devices with inhomogeneous quantum well active regions'20107,310,358'Semiconductor lasers'20077,235,430'Substrates having increased thermal conductivity for semiconductor structures'20076,869,821'Method for producing organic electronic devices on deposited dielectric materials'20056,744,072'Substrates having increased thermal conductivity for semiconductor structures'20046,618,418'Dual III-V nitride laser structure with reduced thermal cross-talk'20036,583,449'Semiconductor device and method of forming a semiconductor device'20036,437,374'Semiconductor device and method of forming a semiconductor device'20026,416,158'Ballistic aerosol marking apparatus with stacked electrode structure'20026,064,078'Formation of group III-V nitride films on sapphire substrates with reduced dislocation densities'20005,608,753'Semiconductor devices incorporating p-type and n-type impurity induced layer disordered material'19975,574,745'Semiconductor devices incorporating P-type and N-type impurity induced layer disordered material'19965,455,429'Semiconductor devices incorporating p-type and n-type impurity induced layer disordered material'19955,376,583'Method for producing P-type impurity induced layer disordering'1994Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1994–2007Patents assigned to XEROX CORP (12)· patent assignee history
1994–2019Based in Palo Alto, CA, US· patent location history
2007–2019Patents assigned to PALO ALTO RES CT INC (23)· patent assignee history
2011–2016Patents assigned to NORTHRUP JOHN E (10)· patent assignee history
2012–2016Patents assigned to JOHNSON NOBLE M (8)· patent assignee history
2015–2016Patents assigned to WUNDERER THOMAS (6)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| PALO ALTO RES CT INC | 23 | 2007–2019 |
| XEROX CORP | 12 | 1994–2007 |
| NORTHRUP JOHN Eself | 10 | 2011–2016 |
| JOHNSON NOBLE M | 8 | 2012–2016 |
| WUNDERER THOMAS | 6 | 2015–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Palo Alto, California, US | 35 | 1994–2019 |