Inventor
Jun-ichi Shiozawa
Inventor
Yokohama, JP
Overview
Patents· 5 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices40%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1040%
H10BElectronic memory devices20%
PatentTitleYear
6,369,423'Semiconductor device with a thin gate stack having a plurality of insulating layers'20026,091,117'Field effect transistor having elevated source and drain regions and methods of manufacturing the same'20005,970,352'Field effect transistor having elevated source and drain regions and methods for manufacturing the same'19995,888,876'Deep trench filling method using silicon film deposition and silicon migration'19995,451,809'Smooth surface doped silicon film formation'1995Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1995–2002Patents assigned to TOSHIBA KK (5)· patent assignee history
1995–1999Based in Wappingers Falls, NY, US· patent location history
1999–2002Based in Yokohama, JP· patent location history
2002Patents assigned to IBM (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOSHIBA KK | 5 | 1995–2002 |
| IBM | 1 | 2002 |
Locations
| Location | Patents | Span |
|---|---|---|
| Yokohama, JP | 3 | 1999–2002 |
| Wappingers Falls, New York, US | 2 | 1995–1999 |