Inventor
Kailash C. Jain
Inventor
Troy, MI, US
Overview
Patents· 17 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G01Nprimary
G01NInvestigating or analysing materials by determining their chemical or physical properties12%
H01MProcesses or means, e.g. batteries, for the direct conversion of chemical energy into electrical energy12%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution12%
H10DInorganic electric semiconductor devices10%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
C04BLime, magnesia7%
Y10TTechnical subjects covered by former us classification7%
C01GCompounds containing metals not covered by subclasses c01d or c01f5%
C01PIndexing scheme relating to structural and physical aspects of solid inorganic compounds5%
G01PMeasuring linear or angular speed, acceleration, deceleration, or shock5%
PatentTitleYear
9,276,267'Low-temperature bonding of refractory ceramic layers'20169,017,897'Metal composite material for attachment to ceramic'20159,005,490'Material for solid state sintered material'20158,124,037'Perovskite materials for solid oxide fuel cell cathodes'20127,964,324'Method for impregnating a solid oxide fuel cell cathode with silver to reduce electrical resistance'20117,244,316'Methods of making gas sensors and sensors formed therefrom'20076,916,384'Method of treating a gas sensor'20056,682,640'Co-fired oxygen sensor elements'20046,638,405'Gas sensor and method of manufacturing the same'20035,776,601'Titania exhaust gas oxygen sensor'19984,948,757'Method for fabricating three-dimensional microstructures and a high-sensitivity integrated vibration sensor using such microstructures'19904,918,032'Method for fabricating three-dimensional microstructures and a high-sensitivity integrated vibration sensor using such microstructures'19904,811,063'JMOS transistor utilizing polysilicon sinks'19894,800,170'Process for forming in a silicon oxide layer a portion with vertical side walls'19894,786,952'High voltage depletion mode MOS power field effect transistor'19884,746,960'Vertical depletion-mode j-MOSFET'19884,652,334'Method for patterning silicon dioxide with high resolution in three dimensions'1987Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1987–1998Patents assigned to GEN MOTORS CORP (8)· patent assignee history
1987–1990Based in Sterling Heights, MI, US· patent location history
1998–2016Based in Troy, MI, US· patent location history
2003–2016Patents assigned to DELPHI TECH INC (9)· patent assignee history
2012–2016Patents assigned to JAIN KAILASH C (2)· patent assignee history
2012–2016Patents assigned to KELLER JOSEPH M (2)· patent assignee history
2012–2016Patents assigned to KERR RICK D (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| DELPHI TECH INC | 9 | 2003–2016 |
| GEN MOTORS CORP | 8 | 1987–1998 |
| JAIN KAILASH Cself | 2 | 2012–2016 |
| KELLER JOSEPH M | 2 | 2012–2016 |
| KERR RICK D | 2 | 2012–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Troy, MI, US | 10 | 1998–2016 |
| Sterling Heights, MI, US | 7 | 1987–1990 |