Inventor

Daniel Lee

Inventor

San Jose, CA, US

Overview

1995–2020

Patent span

Chemistry

Primary field (CPC C)

Patents· 24 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C03Cprimary

C03CChemical composition of glasses, glazes or vitreous enamels35%

C23CCoating metallic material29%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%

E06BFixed or movable closures for openings in buildings, vehicles, fences or like enclosures in general, e.g. doors, windows, blinds, gates6%

B32BLayered products, i.e. products built-up of strata of flat or non-flat, e.g. cellular or honeycomb, form4%

G02BOptical elements, systems or apparatus4%

H10BElectronic memory devices4%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%

G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices2%

H10DInorganic electric semiconductor devices2%

PatentTitleYear

10,745,798Coated article with low-E coating having IR reflecting system with silver and zinc based barrier layer(s)2020 10,731,244Coated article with low-E coating having protective doped silver layer for protecting silver based IR reflecting layer(s), and method of making same2020 10,584,409Coated article having low-E coating with IR reflecting layer(s) and doped titanium oxide dielectric layer(s) and method of making same2020 10,526,692Heat treatable coated article having zirconium nitride and ITO based IR reflecting layers2020 10,480,058Coated article with low-E coating having protective doped silver layer for protecting silver based IR reflecting layer(s), and method of making same2019 10,479,053Coated article having low-E coating with IR reflecting layer(s) and niobium-doped titanium oxide dielectric layer(s) and method of making same2019 10,392,689Heat treatable coated article having zirconium nitride and ITO based IR reflecting layers2019 10,343,948Coated article having low-E coating with IR reflecting layer(s) and high index nitrided dielectric layers2019 10,287,673Coated article having low-E coating with IR reflecting layer(S) and yttrium inclusive high index nitrided dielectric layer2019 10,266,937Coated article having low-E coating with IR reflecting layer(s) and hafnium inclusive high index nitrided dielectric layer2019 10,233,532Coated article with low-E coating having reflecting system with silver and zinc based barrier layer(s)2019 10,233,531Coated article with low-E coating having protective doped silver layer for protecting silver based IR reflecting layer(s), and method of making same2019 10,227,819Coated article with low-E coating having doped silver IR reflecting layer(s)2019 10,213,988Coated article having low-E coating with IR reflecting layer(s) and niobium-doped titanium oxide dielectric layer(s) and method of making same2019 10,196,735Coated article having low-E coating with IR reflecting layer(s) and doped titanium oxide dielectric layer(s) and method of making same2019 10,179,946Coated article having low-E coating with IR reflecting layer(s) and niobium bismuth based high index layer and method of making same2019 10,138,158Coated article having low-E coating with IR reflecting layer(s) and high index nitrided dielectric layers2018 6,069,077'UV resist curing as an indirect means to increase SiN corner selectivity on self-aligned contact etching process'2000 6,025,255'Two-step etching process for forming self-aligned contacts'2000 5,985,363'Method of providing uniform photoresist coatings for tight control of image dimensions'1999 5,977,558'Testchip design for process analysis in sub-micron DRAM fabrication'1999 5,872,018'Testchip design for process analysis in sub-micron DRAM fabrication'1999 5,700,731'Method for manufacturing crown-shaped storage capacitors on dynamic random access memory cells'1997 5,429,979'Method of forming a dram cell having a ring-type stacked capacitor'1995

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1995Patents assigned to IND TECH RES INST (1)· patent assignee history

1995–2000Based in Hsinchu, TW· patent location history

1997–2000Patents assigned to VANGUARD INT SEMICONDUCT CORP (6)· patent assignee history

1999–2000Based in Taipei, TW· patent location history

2018–2020Patents assigned to GUARDIAN GLASS LLC (17)· patent assignee history

2018–2019Patents assigned to GUARDIAN INDUSTRIES (3)· patent assignee history

2018–2020Based in San Jose, CA, US· patent location history

2019–2020Based in Auburn Hills, MI, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
GUARDIAN GLASS LLC	17	2018–2020
VANGUARD INT SEMICONDUCT CORP	6	1997–2000
GUARDIAN INDUSTRIES	3	2018–2019
IND TECH RES INST	1	1995

Locations

Location	Patents	Span
San Jose, California, US	12	2018–2020
Auburn Hills, MI, US	5	2019–2020
Hsinchu, TW	4	1995–2000
Taipei, TW	3	1999–2000