LexDanaLexDanabeta
Inventor

David Cheung

Inventor
Foster City, CA, US

Overview

99→
Patents
1992–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 99 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1025%
C23CCoating metallic material21%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%
H01JElectric discharge tubes or discharge lamps9%
Y10TTechnical subjects covered by former us classification4%
H01LSemiconductor devices3%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices3%
Y02PClimate change mitigation technologies in the production or processing of goods3%
B01JChemical or physical processes, e.g. catalysis or colloid chemistry3%
H05HPlasma technique3%
PatentTitleYear
D0926861Golf green camera assembly202110,505,834Session aware adaptive packet filtering201910,267,728Systems and methods for detecting oxygen in-situ in a substrate area of a substrate processing system201910,109,476Substrate processing method for depositing a barrier layer to prevent photoresist poisoning20189,941,108High dose implantation strip (HDIS) in H20189,838,429Dynamic access policies20179,613,825'Photoresist strip processes for improved device integrity'20179,591,738'Plasma generator systems and methods of forming plasma'20179,564,344'Ultra low silicon loss high dose implant strip'20179,514,954'Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films'20169,397,011'Systems and methods for reducing copper contamination due to substrate processing chambers with components made of alloys including copper'20169,209,000'Gas flow distribution receptacles, plasma generator systems, and methods for performing plasma stripping processes'20159,034,773'Removal of native oxide with high selectivity'20158,916,477'Polysilicon etch with high selectivity'20148,864,935'Plasma generator apparatus'20148,819,763'Dynamic access policies'20148,721,797'Enhanced passivation process to protect silicon prior to high dose implant strip'20148,716,143'Plasma based photoresist removal system for cleaning post ash residue'20148,641,862'High dose implantation strip (HDIS) in H2 base chemistry'20148,619,552'Virtual router with a priority value per port'20138,591,661'Low damage photoresist strip method for low-K dielectrics'20138,444,869'Simultaneous front side ash and backside clean'20138,273,259'Ashing method'20128,193,096'High dose implantation strip (HDIS) in H2 base chemistry'20128,129,281'Plasma based photoresist removal system for cleaning post ash residue'20128,110,068'Gas flow distribution receptacles, plasma generator systems, and methods for performing plasma stripping processes'20127,936,666'Virtual router with a priority value per port'20117,740,768'Simultaneous front side ash and backside clean'20107,651,725'Low dielectric constant film produced from silicon compounds comprising silicon-carbon bond'20107,560,377'Plasma processes for depositing low dielectric constant films'20097,227,244'Integrated low k dielectrics and etch stops'20077,205,249'CVD plasma assisted low dielectric constant films'20077,202,176'Enhanced stripping of low-k films using downstream gas mixing'20077,160,821'Method of depositing low k films'20077,070,657'Method and apparatus for depositing antireflective coating'20067,023,092'Low dielectric constant film produced from silicon compounds comprising silicon-carbon bonds'20066,930,061'Plasma processes for depositing low dielectric constant films'20056,869,896'Plasma processes for depositing low dielectric constant films'20056,858,153'Integrated low K dielectrics and etch stops'20056,806,207'Method of depositing low K films'20046,800,571'CVD plasma assisted low dielectric constant films'20046,770,556'Method of depositing a low dielectric with organo silane'20046,743,737'Method of improving moisture resistance of low dielectric constant films'20046,734,115'Plasma processes for depositing low dielectric constant films'20046,730,593'Method of depositing a low K dielectric with organo silane'20046,709,715'Plasma enhanced chemical vapor deposition of copolymer of parylene N and comonomers with various double bonds'20046,689,930'Method and apparatus for cleaning an exhaust line in a semiconductor processing system'20046,680,420'Apparatus for cleaning an exhaust line in a semiconductor processing system'20046,669,858'Integrated low k dielectrics and etch stops'20036,660,663'Computer readable medium for holding a program for performing plasma-assisted CVD of low dielectric constant films formed from organosilane compounds'20036,660,656'Plasma processes for depositing low dielectric constant films'20036,632,735'Method of depositing low dielectric constant carbon doped silicon oxide'20036,596,655'Plasma processes for depositing low dielectric constant films'20036,593,247'Method of depositing low k films using an oxidizing plasma'20036,562,690'Plasma processes for depositing low dielectric constant films'20036,562,544'Method and apparatus for improving accuracy in photolithographic processing of substrates'20036,541,282'Plasma processes for depositing low dielectric constant films'20036,537,929'CVD plasma assisted low dielectric constant films'20036,517,913'Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissions'20036,511,909'Method of depositing a low K dielectric with organo silane'20036,511,903'Method of depositing a low k dielectric with organo silane'20036,448,187'Method of improving moisture resistance of low dielectric constant films'20026,413,583'Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound'20026,395,092'Apparatus for depositing high deposition rate halogen-doped silicon oxide layer'20026,361,707'Apparatus and methods for upgraded substrate processing system with microwave plasma source'20026,358,573'Mixed frequency CVD process'20026,348,725'Plasma processes for depositing low dielectric constant films'20026,340,435'Integrated low K dielectrics and etch stops'20026,324,439'Method and apparatus for applying films using reduced deposition rates'20016,303,523'Plasma processes for depositing low dielectric constant films'20016,287,990'CVD plasma assisted low dielectric constant films'20016,245,690'Method of improving moisture resistance of low dielectric constant films'20016,230,652'Apparatus and methods for upgraded substrate processing system with microwave plasma source'20016,209,484'Method and apparatus for depositing an etch stop layer'20016,193,802'Parallel plate apparatus for in-situ vacuum line cleaning for substrate processing equipment'20016,194,628'Method and apparatus for cleaning a vacuum line in a CVD system'20016,187,072'Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissions'20016,171,945'CVD nanoporous silica low dielectric constant films'20016,156,149'In situ deposition of a dielectric oxide layer and anti-reflective coating'20006,127,262'Method and apparatus for depositing an etch stop layer'20006,107,184'Nano-porous copolymer films having low dielectric constants'20006,098,568'Mixed frequency CVD apparatus'20006,086,952'Chemical vapor deposition of a copolymer of p-xylylene and a multivinyl silicon/oxygen comonomer'20006,083,852'Method for applying films using reduced deposition rates'20006,077,764'Process for depositing high deposition rate halogen-doped silicon oxide layer'20006,072,227'Low power method of depositing a low k dielectric with organo silane'20006,054,379'Method of depositing a low k dielectric with organo silane'20006,045,618'Microwave apparatus for in-situ vacuum line cleaning for substrate processing equipment'20006,039,834'Apparatus and methods for upgraded substrate processing system with microwave plasma source'20005,968,324'Method and apparatus for depositing antireflective coating'19995,911,834'Gas delivery system'19995,908,672'Method and apparatus for depositing a planarized passivation layer'19995,844,195'Remote plasma source'19985,817,406'Ceramic susceptor with embedded metal electrode and brazing material connection'19985,792,269'Gas distribution for CVD systems'19985,633,073'Ceramic susceptor with embedded metal electrode and eutectic connection'19975,626,678'Non-conductive alignment member for uniform plasma processing of substrates'19975,354,386'Method for plasma etching tapered and stepped vias'19945,158,644'Reactor chamber self-cleaning process'1992

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1992–2010Patents assigned to APPLIED MATERIALS INC (69)· patent assignee history
1992–2019Based in Foster City, CA, US· patent location history
2007–2018Patents assigned to NOVELLUS SYSTEMS INC (19)· patent assignee history
2011–2019Based in Cupertino, CA, US· patent location history
2012–2021Patents assigned to CHEUNG DAVID (14)· patent assignee history
2012–2015Patents assigned to GUHA ANIRBAN (4)· patent assignee history
2014–2017Based in Hoboken, NJ, US· patent location history
2016–2019Patents assigned to LAM RES CORP (4)· patent assignee history
2021Based in Hong Kong, CN· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
APPLIED MATERIALS INC691992–2010
NOVELLUS SYSTEMS INC192007–2018
CHEUNG DAVIDself142012–2021
GUHA ANIRBAN42012–2015
LAM RES CORP42016–2019
Locations
LocationPatentsSpan
Foster City, California, US931992–2019
Cupertino, California, US32011–2019
Hoboken, New Jersey, US22014–2017
Hong Kong, CN12021