Inventor

Yong Wang

Inventor

Yokohama, JP

Overview

2019–2020

Patent span

Electricity

Primary field (CPC H)

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary

H01LSemiconductor devices13%

H10BElectronic memory devices13%

B01DSeparation7%

B01JChemical or physical processes, e.g. catalysis or colloid chemistry7%

C01BNon-metallic elements7%

C01PIndexing scheme relating to structural and physical aspects of solid inorganic compounds7%

G11CStatic stores7%

H10DInorganic electric semiconductor devices7%

H10NElectric solid-state devices not otherwise provided for7%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%

PatentTitleYear

Assembled from patent assignee/location history and declaration credentials.

2019Patents assigned to SHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS (1)· patent assignee history

2019Patents assigned to SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECH CHINESE ACADEMY OF SCIENCE (1)· patent assignee history

2019Patents assigned to YANGTZE MEMORY TECH CO LTD (1)· patent assignee history

2019Based in Wuhan, CN· patent location history

2019Based in Shanghai, CN· patent location history

2020Patents assigned to BASF SE (1)· patent assignee history

2020Based in Yokohama, JP· patent location history

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
BASF SE	1	2020
SHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS	1	2019
SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECH CHINESE ACADEMY OF SCIENCE	1	2019
YANGTZE MEMORY TECH CO LTD	1	2019

Locations