LexDanaLexDanabeta
Inventor

Takashi Kyono

Inventor
Itami, JP

Overview

84→
Patents
2006–2019
Patent span
Electricity
Primary field (CPC H)

Patents· 84 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

B82Yprimary
B82YSpecific uses or applications of nanostructures24%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light23%
H10HInorganic light-emitting semiconductor devices having potential barriers17%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
H01LSemiconductor devices7%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation3%
H10DInorganic electric semiconductor devices3%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution3%
C30BSingle-crystal growth2%
Y02PClimate change mitigation technologies in the production or processing of goods1%
PatentTitleYear
10,333,270Optical module and method for manufacturing the optical module201910,326,034Semiconductor laminate and light-receiving element201910,199,795Optical module and method for manufacturing the optical module201910,158,035Semiconductor stack, light-receiving device, and method for producing semiconductor stack201810,024,516Optical module20189,929,301'Semiconductor stack and semiconductor device'20189,887,310'Semiconductor layered structure, method for producing semiconductor layered structure, and method for producing semiconductor device'20189,806,494'Optical module and method for manufacturing the optical module'20179,773,932'Epitaxial wafer and method for manufacturing same'20179,608,148'Semiconductor element and method for producing the same'20179,425,348'Group III nitride semiconductor device, and method for fabricating group III nitride semiconductor device'20169,379,523'Group III nitride semiconductor device, p-type contact structure, and method for fabricating group III nitride semiconductor device'20169,281,427'Semiconductor device'20169,231,375'Semiconductor device'20169,231,370'Group III nitride semiconductor light emitting device'20169,123,843'Semiconductor device'20158,953,656'III-nitride semiconductor laser device and method for fabricating III-nitride semiconductor laser device'20158,927,962'Group III nitride semiconductor optical device'20158,923,354'Nitride semiconductor laser, epitaxial substrate'20148,917,750'III-nitride semiconductor laser diode'20148,891,568'Laser diode device and method of manufacturing laser diode device'20148,884,306'Semiconductor device and method for manufacturing the same'20148,872,156'Group III nitride semiconductor light emitting device and method of fabricating group III nitride semiconductor light emitting device'20148,829,545'Group III nitride semiconductor light-emitting device'20148,823,027'Light emitting device'20148,809,868'Group-III nitride semiconductor device, method for fabricating Group-III nitride semiconductor device, and epitaxial substrate'20148,803,274'Nitride-based semiconductor light-emitting element'20148,748,868'Nitride semiconductor light emitting device and epitaxial substrate'20148,741,674'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'20148,731,016'Nitride semiconductor light emitting device'20148,718,110'Nitride semiconductor laser and epitaxial substrate'20148,693,515'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'20148,653,621'Nitride-based semiconductor light-emitting element'20148,619,828'Group III nitride semiconductor laser diode'20138,548,021'III-nitride semiconductor laser, and method for fabricating III-nitride semiconductor laser'20138,546,163'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'20138,541,253'III-nitride semiconductor laser device, and method of fabricating the III-nitride semiconductor laser device'20138,513,684'Nitride semiconductor light emitting device'20138,507,305'Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and epitaxial substrate'20138,488,642'Gallium nitride based semiconductor light-emitting device and method for fabricating the same, gallium nitride based light-emitting diode, epitaxial wafer, and method for fabricating gallium nitride light-emitting diode'20138,487,327'Group-III nitride semiconductor device, epitaxial substrate, and method of fabricating group-III nitride semiconductor device'20138,483,251'Group III nitride semiconductor laser diode, and method for producing group III nitride semiconductor laser diode'20138,477,818'Gallium nitride-based semiconductor laser device, and method for fabricating gallium nitride-based semiconductor laser device'20138,476,615'GaN-based semiconductor light emitting device and the method for making the same'20138,445,925'Semiconductor optical device'20138,415,707'Group III nitride semiconductor device'20138,405,066'Nitride-based semiconductor light-emitting device'20138,357,558'Method of making semiconductor light-emitting device'20138,357,946'Nitride semiconductor light emitting device, epitaxial substrate, and method for fabricating nitride semiconductor light emitting device'20138,304,269'Method of fabricating group III nitride semiconductor device'20128,304,793'III-nitride semiconductor optical device and epitaxial substrate'20128,306,082'Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device'20128,295,317'Method of making nitride semiconductor laser, method of making epitaxial wafer, and nitride semiconductor laser'20128,284,811'Gallium nitride-based semiconductor laser diode'20128,227,277'Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device'20128,227,898'Ohmic contact on a p-type principal surface tilting with respect to the c-plane'20128,207,556'Group III nitride semiconductor device and epitaxial substrate'20128,207,544'Group-III nitride semiconductor device, epitaxial substrate, and method of fabricating group-III nitride semiconductor device'20128,183,596'High electron mobility transistor, epitaxial wafer, and method of fabricating high electron mobility transistor'20128,183,071'Method for producing nitride semiconductor optical device and epitaxial wafer'20128,174,035'Nitride-based semiconductor light emitting device'20128,148,716'Group III nitride semiconductor optical device, epitaxial substrate, and method of making group III nitride semiconductor light-emitting device'20128,071,986'Nitride semiconductor light-emitting element'20118,067,257'Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device'20118,053,806'Group III nitride semiconductor device and epitaxial substrate'20118,048,702'Method of fabricating nitride-based semiconductor optical device'20117,973,322'Nitride semiconductor light emitting device and method for forming the same'20117,968,864'Group-III nitride light-emitting device'20117,955,881'Method of fabricating quantum well structure'20117,949,026'Group III nitride semiconductor laser'20117,939,354'Method of fabricating nitride semiconductor laser'20117,933,303'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'20117,884,351'Nitride semiconductor light-emitting device'20117,883,915'Method of making nitride semiconductor laser, method of making epitaxial wafer, and nitride semiconductor laser'20117,858,963'Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device'20107,851,821'Group III nitride semiconductor device, epitaxial substrate, and method of fabricating group III nitride semiconductor device'20107,851,243'Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device'20107,816,238'GaN substrate, substrate with epitaxial layer, semiconductor device, and method of manufacturing GaN substrate'20107,781,314'Nitride semiconductor device manufacturing method'20107,576,351'Nitride semiconductor light generating device'20097,554,122'Nitride semiconductor light emitting device, and method of fabricating nitride semiconductor light emitting device'20097,547,910'Semiconductor light-emitting device and method of manufacturing semiconductor light-emitting device'20097,387,678'GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same'20086,998,284'Semiconductor device having quantum well structure, and method of forming the same'2006

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2006–2019Patents assigned to SUMITOMO ELECTRIC INDUSTRIES (82)· patent assignee history
2006–2019Based in Itami, JP· patent location history
2011–2016Patents assigned to KYONO TAKASHI (45)· patent assignee history
2011–2016Patents assigned to UENO MASAKI (40)· patent assignee history
2011–2016Patents assigned to ENYA YOHEI (38)· patent assignee history
2011–2016Patents assigned to YOSHIZUMI YUSUKE (35)· patent assignee history
2014–2016Based in Osaka, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SUMITOMO ELECTRIC INDUSTRIES822006–2019
KYONO TAKASHIself452011–2016
UENO MASAKI402011–2016
ENYA YOHEI382011–2016
YOSHIZUMI YUSUKE352011–2016
Locations
LocationPatentsSpan
Itami, JP792006–2019
Osaka, JP52014–2016