Inventor
Fu-Kai Yang
Inventor
Hsinchu, TW
Overview
Patents· 43 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices27%
H10DInorganic electric semiconductor devices27%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1022%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
H04BTransmission1%
H04HBroadcast communication1%
H04RLoudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers1%
H10BElectronic memory devices1%
LOC121%
PatentTitleYear
10,872,781Semiconductor device and a method for fabricating the same202010,867,870Semiconductor device with funnel shape spacer and methods of forming the same202010,867,846Fin field effect transistor (finFET) device structure with protection layer and method for forming the same202010,868,118Methods of forming epitaxial source/drain features in semiconductor devices202010,854,615FinFET having non-merging epitaxially grown source/drains202010,825,737Prevention of contact bottom void in semiconductor fabrication202010,797,050Fin field effect transistor (finFET) device structure with capping layer and method for forming the same202010,755,945Metal contacts on metal gates and methods thereof202010,741,438Low-resistance contact plugs and method forming the same202010,727,068Method for manufacturing semiconductor structure with mask structure202010,685,880Methods for reducing contact depth variation in semiconductor fabrication202010,546,755Semiconductor device and a method for fabricating the same202010,535,555Contact plugs and methods forming same202010,504,990Isolation features and methods of fabricating the same201910,490,459Method for source/drain contact formation in semiconductor devices2019D0866394Unmanned aerial vehicle201910,475,788Fin field effect transistor (FinFET) device structure with capping layer and method for forming the same201910,468,257Mechanisms for semiconductor device structure201910,276,437Contact structure of gate structure201910,269,621Contact plugs and methods forming same201910,177,038Prevention of contact bottom void in semiconductor fabrication201910,163,703Method for forming self-aligned contact201810,158,018Semiconductor device and manufacturing method thereof201810,153,198Low-resistance contact plugs and method forming same201810,121,675Semiconductor device and a method for fabricating the same201810,096,525Method for fabricating self-aligned contact in a semiconductor device201810,083,841Semiconductor device and a method for fabricating the same20189,685,439'Semiconductor device and manufacturing method thereof'20179,679,812'Semiconductor device with self-aligned contact'20179,647,116'Method for fabricating self-aligned contact in a semiconductor device'20179,576,847'Method for forming integrated circuit structure with thinned contact'20179,536,754'Method of forming contact structure of gate structure'20179,496,367'Mechanism for forming metal gate structure'20169,437,495'Mask-less dual silicide process'20169,425,048'Mechanisms for semiconductor device structure'20169,331,173'Semiconductor device having a carbon containing insulation layer formed under the source/drain'20169,312,259'Integrated circuit structure with thinned contact'20169,299,657'Semiconductor device and method for manufacturing semiconductor device'20169,231,098'Mechanism for forming metal gate structure'20169,123,563'Method of forming contact structure of gate structure'20159,093,299'Semiconductor arrangement and formation thereof'20158,372,719'Hard mask removal for semiconductor devices'20137,001,836'Two step trench definition procedure for formation of a dual damascene opening in a stack of insulator layers'2006Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2006–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (6)· patent assignee history
2006Based in Shulin City, TW· patent location history
2013Patents assigned to HUNG CHI-CHENG (1)· patent assignee history
2013Patents assigned to PENG YUAN-CHING (1)· patent assignee history
2013Based in Dali, TW· patent location history
2015–2020Based in Hsinchu, TW· patent location history
2016–2020Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (35)· patent assignee history
2019Patents assigned to GEOSAT AEROSPACE & TECH (1)· patent assignee history
2019Based in Tainan, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 35 | 2016–2020 |
| TAIWAN SEMICONDUCTOR MFG | 6 | 2006–2016 |
| GEOSAT AEROSPACE & TECH | 1 | 2019 |
| HUNG CHI-CHENG | 1 | 2013 |
| PENG YUAN-CHING | 1 | 2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 40 | 2015–2020 |
| Tainan, TW | 1 | 2019 |
| Dali, TW | 1 | 2013 |
| Shulin City, TW | 1 | 2006 |