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Inventor

Yutaka Takafuji

Inventor
Nara, JP

Overview

86→
Patents
1981–2014
Patent span
Electricity
Primary field (CPC H)

Patents· 86 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices24%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein13%
G09GArrangements or circuits for control of indicating devices using static means to present variable information10%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
H04NPictorial communication, e.g. television3%
B82YSpecific uses or applications of nanostructures2%
G01RMeasuring electric variables2%
H10KOrganic electric solid-state devices2%
PatentTitleYear
8,674,481'Active device on a cleaved silicon substrate'20148,604,579'Semiconductor device, and method for manufacturing same'20138,563,406'Semiconductor substrate, semiconductor device, and manufacturing methods for them'20138,421,076'Insulating substrate for semiconductor apparatus, semiconductor apparatus, and method for manufacturing semiconductor apparatus'20138,361,882'Semiconductor device and method for manufacturing same'20138,354,329'Semiconductor device manufacturing method, semiconductor device and display apparatus'20138,293,621'Semiconductor substrate, semiconductor device, and manufacturing methods for them'20128,288,184'Production method of semiconductor device and semiconductor device'20128,258,499'Core-shell-shell nanowire transistor'20128,207,046'Method for producing semiconductor device and semiconductor device produced by same method'20128,188,564'Semiconductor device having a planarizing film formed in a region of a step portion'20128,129,768'Integrated circuit device, manufacturing method thereof, and display device'20128,101,502'Semiconductor device and its manufacturing method'20128,017,492'Method for fabricating semiconductor device and semiconductor device with separation along peeling layer'20118,008,205'Methods for producing a semiconductor device having planarization films'20117,989,304'Method for transferring semiconductor element, method for manufacturing semiconductor device, and semiconductor device'20117,935,599'Nanowire transistor and method for forming same'20117,923,310'Core-shell-shell nanowire transistor and fabrication method'20117,919,392'Semiconductor device and method of manufacturing the same'20117,897,443'Production method of semiconductor device and semiconductor device'20117,884,367'Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate'20117,838,936'Semiconductor device and manufacturing method thereof, and liquid crystal display device'20107,829,400'Semiconductor device fabrication method and semiconductor device'20107,791,190'Substrate with crystal silicon array'20107,659,582'Active silicon device on a cleaved silicon-on-insulator substrate'20107,619,250'Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate'20097,563,693'Method for manufacturing semiconductor substrate and semiconductor substrate'20097,528,446'Semiconductor substrate, semiconductor device, and manufacturing methods for them'20097,525,530'Display device and scanning circuit testing method'20097,508,034'Single-crystal silicon substrate, SOI substrate, semiconductor device, display device, and manufacturing method of semiconductor device'20097,488,980'Thin film semiconductor device and fabrication method therefor'20097,466,011'Cleaved silicon substrate active device'20087,436,027'Semiconductor device and fabrication method for the same'20087,425,475'Method for fabricating semiconductor device and semiconductor device'20087,262,464'Semiconductor device with single crystal semiconductor layer(s) bonded to insulating surface of substrate'20077,253,040'Fabrication method of semiconductor device'20077,244,990'Semiconductor device'20077,205,204'Semiconductor device and fabrication method for the same'20077,183,179'System and method for hydrogen exfoliation gettering'20077,179,719'System and method for hydrogen exfoliation'20077,119,365'Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate'20067,071,912'Display panel drive circuit and display panel'20067,002,659'Liquid crystal panel and liquid crystal projector'20066,909,304'Display device and scanning circuit testing method'20056,831,625'LCD driving circuitry with reduced number of control signals'20046,759,277'Crystalline silicon die array and method for assembling crystalline silicon sheets onto substrates'20046,693,617'Liquid crystal display apparatus and data driver'20046,618,033'Liquid crystal display device'20036,603,455'Display panel drive circuit and display panel'20036,522,323'Level shift circuit and image display device'20036,507,381'Liquid crystal panel having tilted liquid crystal molecules and liquid crystal display using the liquid crystal panel'20036,437,766'LCD driving circuitry with reduced number of control signals'20026,157,420'Projection-type image display apparatus'20006,081,250'Active matrix display device and its driving method'20006,081,310'Reflection-type liquid crystal display having a silver or silver alloy upper electrode layer'20006,028,580'Liquid crystal display device'20005,801,673'Liquid crystal display device and method for driving the same'19985,748,175'LCD driving apparatus allowing for multiple aspect resolution'19985,703,663'Projection type liquid crystal display apparatus'19975,684,552'Color liquid crystal display having a color filter composed of multilayer thin films'19975,677,749'Method for producing an LCD having no spacers in the display area in which heating alleviates cell distortion or greater pressure is applied to the seal region'19975,638,199'Liquid crystal display device and method for repairing defective portions thereof'19975,629,787'Method for producing an LCD by pressing the substrates'19975,596,023'Sealing material for liquid crystal display panel, and liquid crystal display panel using it'19975,576,730'Active matrix substrate and a method for producing the same'19965,568,297'Method of making a liquid crystal display device by measuring the liquid crystal layer thickness and adjusting'19965,528,056'CMOS thin-film transistor having split gate structure'19965,506,516'Method of inspecting an active matrix substrate'19965,506,598'Active matrix substrate and a method for driving the same'19965,499,127'Liquid crystal display device having a larger gap between the substrates in the display area than in the sealant area'19965,182,620'Active matrix display device'19935,172,254'Projection-type liquid crystal display apparatus'19925,159,477'Active matrix display device having additional capacitors connected to switching elements and additional capacitor common line'19925,155,612'Liquid crystal display device with light shield'19925,102,217'Projection-type color display apparatus'19925,073,772'Liquid crystal display device'19915,037,196'Projection-type color display apparatus'19914,928,123'Projection type liquid crystal display device'19904,842,371'Liquid crystal display device having interlaced driving circuits for driving rows and columns one-half cycle out of phase'19894,746,628'Method for making a thin film transistor'19884,720,736'Amorphous silicon thin film transistor'19884,654,959'Method for the manufacture of thin film transistors'19874,469,568'Method for making thin-film transistors'19844,425,572'Thin film transistor'19844,404,578'Structure of thin film transistors'19834,300,138'Electric memory detector in an ECD driver'1981

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1981–2013Patents assigned to SHARP KK (76)· patent assignee history
1981Based in Tenri, JP· patent location history
1983–2014Based in Nara, JP· patent location history
2004–2014Patents assigned to SHARP LAB OF AMERICA INC (10)· patent assignee history
2012–2014Patents assigned to TAKAFUJI YUTAKA (13)· patent assignee history
2012–2013Patents assigned to FUKUSHIMA YASUMORI (9)· patent assignee history
2012–2013Patents assigned to TAKEI MICHIKO (6)· patent assignee history
2012–2013Based in Osaka, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SHARP KK761981–2013
TAKAFUJI YUTAKAself132012–2014
SHARP LAB OF AMERICA INC102004–2014
FUKUSHIMA YASUMORI92012–2013
TAKEI MICHIKO62012–2013
Locations
LocationPatentsSpan
Nara, JP771983–2014
Osaka, JP82012–2013
Tenri, JP11981