Inventor
Joon-Mo Kwon
Inventor
Gyeonggi-do, KR
Overview
Patents· 6 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices46%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1031%
H10BElectronic memory devices15%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
PatentTitleYear
7,825,496'Semiconductor device having a filling pattern around a storage structure and method of forming the same'20107,192,822'Method of fabricating CMOS type semiconductor device having dual gates'20077,148,116'Semiconductor device with load resistor and fabrication method'20067,101,769'Method of forming a reliable high performance capacitor using an isotropic etching process'20067,084,478'Load resistor with dummy contact substantially free of charge build up during etching process'20066,271,105'Method of forming multiple wells in a semiconductor integrated circuit using fewer photolithography steps'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001–2010Patents assigned to SAMSUNG ELECTRONICS CO LTD (6)· patent assignee history
2001Based in Kyungki-do, KR· patent location history
2006–2007Based in Gyeonggi-do, KR· patent location history
2006Based in Suwon-si, KR· patent location history
2010Based in Hwaseong-si, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 6 | 2001–2010 |
Locations
| Location | Patents | Span |
|---|---|---|
| Gyeonggi-do, KR | 2 | 2006–2007 |
| Suwon-si, KR | 2 | 2006 |
| Hwaseong-si, KR | 1 | 2010 |
| Kyungki-do, KR | 1 | 2001 |