Inventor
Tahir Hussain
Inventor
Calabasas, CA, US
Overview
Patents· 40 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices30%
H04WWireless communication networks13%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
H01LSemiconductor devices8%
G06FElectric digital data processing5%
H04LTransmission of digital information, e.g. telegraphic communication5%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
A61BDiagnosis2%
A61NElectrotherapy2%
C23CCoating metallic material2%
PatentTitleYear
9,953,796Nano vacuum gap device with a gate-all-around cathode20189,880,148'Scalable high-density wireless neuroelectric sensor and stimulator array'20189,691,761'Monolithic integration of GaN and InP components'20179,662,498'Scalable high-density wireless neuroelectric sensor and stimulator array'20179,536,844'Transient antennas and transient electronics'20179,515,068'Monolithic integration of GaN and InP components'20169,450,022'Memristor devices and fabrication'20169,383,266'Test structure to monitor the in-situ channel temperature of field effect transistors'20169,190,534'Enhancement mode normally-off gallium nitride heterostructure field effect transistor'20159,087,854'Thermal management for heterogeneously integrated technology'20158,957,455'Modulation doped super-lattice base for heterojunction bipolar transistors'20158,728,884'Enhancement mode normally-off gallium nitride heterostructure field effect transistor'20148,587,037'Test structure to monitor the in-situ channel temperature of field effect transistors'20138,575,659'Carbon-beryllium combinationally doped semiconductor'20138,525,301'Method and apparatus for fabricating heterojunction bipolar transistors with simultaneous low base resistance and short base transit time'20138,178,946'Modulation doped super-lattice base for heterojunction bipolar transistors'20128,030,688'Ohmic metal contact protection using an encapsulation layer'20117,868,335'Modulation doped super-lattice sub-collector for high-performance HBTs and BJTs'20117,598,131'High power-low noise microwave GaN heterojunction field effect transistor'20097,569,872'Bipolar transistors with low parasitic losses'20097,566,916'Ohmic metal contact and channel protection in GaN devices using an encapsulation layer'20097,494,887'Method and apparatus for fabricating heterojunction bipolar transistors with simultaneous low base resistance and short base transit time'20097,470,941'High power-low noise microwave GaN heterojunction field effect transistor'20087,368,765'Bipolar transistors with low parasitic losses'20087,229,874'Method and apparatus for allowing formation of self-aligned base contacts'20077,181,529'Business to business engine and system for facilitating information interexchange using realtime data'20077,098,490'GaN DHFET'20067,043,231'System, method and apparatus for polling telecommunications nodes for real-time information'20066,884,704'Ohmic metal contact and channel protection in GaN devices using an encapsulation layer'20056,852,615'Ohmic contacts for high electron mobility transistors and a method of making the same'20056,816,720'Call-based provisioning of mobile equipment location information'20046,725,048'Traffic congestion management when providing realtime information to service providers'20046,680,236'Ion-implantation and shallow etching to produce effective edge termination in high-voltage heterojunction bipolar transistors'20046,591,105'System and method for managing access in cellular network with multiple profiles'20036,397,071'System and method for configuring generic equipment measurement units with a mobile services switching center'20026,366,781'System and method for time of arrival based positioning during handover'20026,351,644'System, method and apparatus to prepare base transceiver station for intra-cell asynchronous positioning handover'20026,198,935'System and method for time of arrival positioning measurements based upon network characteristics'20016,173,180'System and method of providing preferential access to subscribers of localized service areas in a radio telecommunications network'20016,163,700'System and method for adaptive reservation of radio resources for cells belonging to localized service area'2000Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2000–2007Patents assigned to ERICSSON INC (11)· patent assignee history
2000–2007Based in Dallas, TX, US· patent location history
2002Based in Kista, SE· patent location history
2004–2018Based in Calabasas, CA, US· patent location history
2005–2018Patents assigned to HRL LAB LLC (28)· patent assignee history
2012–2016Patents assigned to HUSSAIN TAHIR (7)· patent assignee history
2012–2015Patents assigned to LI JAMES CHINGWEI (4)· patent assignee history
2012–2015Patents assigned to CHOW DAVID H (2)· patent assignee history
2013Based in Malibu, CA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HRL LAB LLC | 28 | 2005–2018 |
| ERICSSON INC | 11 | 2000–2007 |
| HUSSAIN TAHIRself | 7 | 2012–2016 |
| LI JAMES CHINGWEI | 4 | 2012–2015 |
| CHOW DAVID H | 2 | 2012–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Calabasas, California, US | 28 | 2004–2018 |
| Dallas, Texas, US | 10 | 2000–2007 |
| Malibu, California, US | 1 | 2013 |
| Kista, SE | 1 | 2002 |