Inventor
Yung-Hee Yvette Lee
Inventor
San Jose, CA, US
Overview
Patents· 17 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Jprimary
H01JElectric discharge tubes or discharge lamps22%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices16%
H10DInorganic electric semiconductor devices11%
B82YSpecific uses or applications of nanostructures8%
C03CChemical composition of glasses, glazes or vitreous enamels8%
C23FNon-mechanical removal of metallic material from surface8%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
A47GHousehold or table equipment3%
G01NInvestigating or analysing materials by determining their chemical or physical properties3%
G06FElectric digital data processing3%
PatentTitleYear
10,157,989Graphene electronic device and manufacturing method thereof20189,054,708'Touch sensor and touch panel including the same'20158,742,400'Graphene switching device including tunable barrier'20148,202,441'Process for etching a metal layer suitable for use in photomask fabrication'20127,858,464'Methods of manufacturing non-volatile memory devices having insulating layers treated using neutral beam irradiation'20107,804,250'Apparatus and method to generate plasma'20107,737,040'Method of reducing critical dimension bias during fabrication of a semiconductor device'20107,682,518'Process for etching a metal layer suitable for use in photomask fabrication'20107,521,000'Process for etching photomasks'20097,365,014'Reticle fabrication using a removable hard mask'20087,285,788'Ion beam extractor'20077,250,309'Integrated phase angle and optical critical dimension measurement metrology for feed forward and feedback process control'20076,921,723'Etching method having high silicon-to-photoresist selectivity'20056,486,480'Plasma formed ion beam projection lithography system'20026,124,834'Glass antenna for RF-ion source operation'20006,094,012'Low energy spread ion source with a coaxial magnetic filter'20005,945,677'Focused ion beam system'1999Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1999–2002Patents assigned to UNIV CALIFORNIA (4)· patent assignee history
1999–2002Based in Berkeley, CA, US· patent location history
2005–2012Patents assigned to APPLIED MATERIALS INC (7)· patent assignee history
2005–2012Based in San Jose, CA, US· patent location history
2007–2018Patents assigned to SAMSUNG ELECTRONICS CO LTD (6)· patent assignee history
2007–2010Based in Suwon-si, KR· patent location history
2012Patents assigned to CHANDRACHOOD MADHAVI R (1)· patent assignee history
2012Patents assigned to DING JIAN (1)· patent assignee history
2014–2015Based in Seongnam-si, KR· patent location history
2018Based in Gyeonggi-do, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| APPLIED MATERIALS INC | 7 | 2005–2012 |
| SAMSUNG ELECTRONICS CO LTD | 6 | 2007–2018 |
| UNIV CALIFORNIA | 4 | 1999–2002 |
| CHANDRACHOOD MADHAVI R | 1 | 2012 |
| DING JIAN | 1 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| San Jose, California, US | 7 | 2005–2012 |
| Berkeley, California, US | 4 | 1999–2002 |
| Seongnam-si, KR | 2 | 2014–2015 |
| Suwon-si, KR | 2 | 2007–2010 |
| Gyeonggi-do, KR | 1 | 2018 |