Inventor
Jinseong Heo
Inventor
Seoul, KR
Overview
Patents· 22 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices24%
H10DInorganic electric semiconductor devices16%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation15%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution13%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
H10BElectronic memory devices4%
H10HInorganic light-emitting semiconductor devices having potential barriers3%
G11CStatic stores2%
H10KOrganic electric solid-state devices2%
H10NElectric solid-state devices not otherwise provided for2%
PatentTitleYear
10,714,500Electronic device and method of manufacturing the same202010,702,940Logic switching device and method of manufacturing the same202010,680,066Graphene device, methods of manufacturing and operating the same, and electronic apparatus including the graphene device202010,553,684Optical sensor and image sensor including graphene quantum dots202010,553,730Broadband multi-purpose optical device and methods of manufacturing and operating the same202010,529,877Semiconductor devices including two-dimensional materials and methods of manufacturing the semiconductor devices202010,439,078Photosensor including multiple detection mode and method of operating the same201910,217,513Phase change memory devices including two-dimensional material and methods of operating the same201910,186,545Image sensor including visible and near-infrared light detectors and method of manufacturing the same201910,121,854Electronic device including side gate and two-dimensional material channel and method of manufacturing the electronic device201810,096,735Photodetector using bandgap-engineered 2D materials and method of manufacturing the same201810,079,313Graphene electronic device having channel layer including graphene islands and method of fabricating the same201810,074,737Flexible device including two-dimensional material and method of manufacturing the same20189,960,309Photoelectronic device including charge barrier20189,923,104'Photosensor including multiple detection mode and method of operating the same'20189,887,303'Semiconductor device including two-dimensional material, and method of manufacturing the semiconductor device'20189,806,218'Photodetector using bandgap-engineered 2D materials and method of manufacturing the same'20179,755,092'Optical device including two-dimensional material and method of manufacturing the same'20179,735,233'Electronic device including side gate and two-dimensional material channel and method of manufacturing the electronic device'20179,691,853'Electronic device including graphene and quantum dots'20179,595,580'Two-dimensional (2D) material element with in-plane metal chalcogenide-based heterojunctions and devices including said element'20179,583,639'Nonvolatile memory device using two-dimensional material and method of manufacturing the same'2017Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2017–2020Patents assigned to SAMSUNG ELECTRONICS CO LTD (22)· patent assignee history
2017–2020Based in Seoul, KR· patent location history
2018–2020Patents assigned to RESEARCH & BUSINESS FOUND SUNGKYUNKWAN UNIV (2)· patent assignee history
2018–2019Based in Suwon-si, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 22 | 2017–2020 |
| RESEARCH & BUSINESS FOUND SUNGKYUNKWAN UNIV | 2 | 2018–2020 |
Locations
| Location | Patents | Span |
|---|---|---|
| Seoul, KR | 20 | 2017–2020 |
| Suwon-si, KR | 2 | 2018–2019 |