Inventor

MING-HSIU LEE

Inventor
TW

Overview

46→
Patents
2021–2025
Patent span
Physics
Primary field (CPC G)

Patents· 46 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores39%
G06FElectric digital data processing13%
G06NComputing arrangements based on specific computational models8%
H01LSemiconductor devices7%
H10BElectronic memory devices7%
H10DInorganic electric semiconductor devices5%
H10NElectric solid-state devices not otherwise provided for5%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
Y02DClimate change mitigation technologies in information and communication technologies [ict], i.e. information and communication technologies aiming at the reduction of their own energy use3%
H04LTransmission of digital information, e.g. telegraphic communication2%
PatentTitleYear
12,500,143Bonding structure, semiconductor chip and fabricating method thereof202512,462,869Memory structure, manufacturing method thereof, operating method thereof, and memory array202512,456,513Reservoir device and reservoir array202512,423,375Memory device and computing method thereof202512,417,170Computing system and method of operation thereof202512,400,715Non-volatile 3D memory search architecture202512,399,622High-level architecture for 3D-NAND based in-memory search202512,362,003In-memory computation device and in-memory computation method to perform multiplication operation in memory cell array according to bit orders202512,347,481Universal memory for in-memory computing and operation method thereof202512,321,607Memory device and method for operating the same202512,283,343IMS memory cell, IMS method and IMS memory device202512,260,917Storage device for generating identity code and identity code generating method202512,255,136Semiconductor structure and method for manufacturing having the conductive portions isolated from each other by an insulating 2D material202512,224,038Memory device and intelligent operation method thereof202512,211,550Ternary content addressable memory and decision generation method for the same202512,198,757Memory device and method for operating the same202512,159,673Content-addressable memory and analog content-addressable memory device202412,142,316Memory device for in-memory computing202412,114,514Method for manufacturing memory device202412,094,564Memory device and computing method thereof202412,068,030CAM cell, CAM device and operation method thereof, and method for searching and comparing data202412,046,286Programmable logic computation in memory202411,984,166Storage device for generating identity code and identity code generating method202411,955,202Multilevel content addressable memory, multilevel coding method of and multilevel searching method202411,955,168Memory device and computing method using the same202411,923,008Ternary content addressable memory and decision generation method for the same202411,871,588Memory device and method for manufacturing the same202411,823,749CAM cell, CAM memory device and operation method thereof202311,816,030Memory device and operating method thereof202311,804,269Flash memory and flash memory cell thereof202311,776,873Semiconductor structure and manufacturing method for the same202311,756,620Content-addressable memory and analog content-addressable memory device202311,664,070In-memory computation device and in-memory computation method to perform multiplication operation in memory cell array according to bit orders202311,644,374Left and right feet pedaling analysis system202311,586,418Random number generator, random number generating circuit, and random number generating method202311,587,611Memory device with input circuit, output circuit for performing efficient data searching and comparing within large-sized memory array202311,587,623Content-addressable memory and operation method thereof202311,587,617Ternary content addressable memory and decision generation method for the same202311,586,900Training algorithm in artificial neural network (ANN) incorporating non-ideal memory device behavior202311,569,227Three-way switch array structure and switch array substrate based on NVM202311,557,354Flash memory and flash memory cell thereof202311,532,337Multilevel content addressable memory, multilevel coding method of and multilevel searching method202211,328,775Ternary content addressable memory and memory cell thereof202211,302,605Semiconductor structure comprising via element and manufacturing method for the same202211,195,581Memory cell, memory array and operation method using the same202111,138,497In-memory computing devices for neural networks2021

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2021–2025Patents assigned to MACRONIX INT CO LTD (45)· patent assignee history
2021–2025Based in TW· patent location history
2023Patents assigned to UNIV NAT TAIWAN NORMAL (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
MACRONIX INT CO LTD452021–2025
UNIV NAT TAIWAN NORMAL12023
Locations
LocationPatentsSpan
TW462021–2025