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Inventor

Janice H. Nickel

Inventor
Sunnyvale, CA, US

Overview

60→
Patents
1998–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 60 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores25%
H10BElectronic memory devices17%
H10NElectric solid-state devices not otherwise provided for17%
B82YSpecific uses or applications of nanostructures10%
H01FMagnets6%
G11BInformation storage based on relative movement between record carrier and transducer4%
H01LSemiconductor devices4%
H10DInorganic electric semiconductor devices2%
C23CCoating metallic material1%
G05DSystems for controlling or regulating non-electric variables1%
PatentTitleYear
11,036,239Object identification for autonomous road vehicles202110,008,666Non-volatile resistive memory cells20189,911,490'Memory controllers'20189,588,888'Memory device and method for altering performance characteristic based on bandwidth demand'20179,466,793'Memristors having at least one junction'20169,299,746'Select device for cross point memory structures'20169,293,200'Multilayer memory array'20169,230,611'Structure of a switching device in an array'20169,172,035'Memristors and methods of fabrication'20159,040,948'Nanoscale switching device'20158,976,569'Mitigation of inoperable low resistance elements in programable crossbar arrays'20158,658,463'Memristor with embedded switching layer'20148,587,985'Memory array with graded resistance lines'20138,508,643'Method and system for processing an image'20138,314,475'Nanoscale electronic device with anisotropic dielectric material'20128,207,519'Ionic-modulated dopant profile control in nanoscale switching devices'20128,028,743'Passive cooling in response to ambient environmental properties'20117,999,211'Heating element structure with isothermal and localized output'20117,613,040'Methods for using sense lines to thermally control the state of an MRAM'20097,504,135'Method of fabricating a manganese diffusion barrier'20097,397,098'Using sense lines to thermally control the state of an MRAM'20087,397,074'RF field heated diodes for providing thermally assisted switching to magnetic memory elements'20087,397,077'Magnetic memory devices having patterned heater layers therein that utilize thermally conductive sidewall materials to increase heat transfer when writing memory data'20087,339,817'Thermally-assisted switching of magnetic memory elements'20087,295,503'Data storage device including nanotube electron sources'20077,196,955'Hardmasks for providing thermally assisted switching of magnetic memory elements'20077,186,992'Method of fabricating a polarizing layer on an interface'20077,180,770'Series diode thermally assisted MRAM'20077,167,391'Multilayer pinned reference layer for a magnetic storage device'20077,151,652'Top-pinned magnetoresistive device having adjusted interface property'20067,147,108'Method and apparatus for the separation and collection of particles'20067,103,718'Non-volatile memory module for use in a computer system'20067,078,244'Multi-bit MRAM device with switching nucleation sites'20067,057,258'Resistive memory device and method for making the same'20067,054,119'Coupled ferromagnetic systems having modified interfaces'20066,989,975'Magnetoresistive device including pinned structure with a layer that provides texture for pinning'20066,950,919'Computer system with operating system to dynamically adjust the main memory'20056,930,369'Thin film device and a method of providing thermal assistance therein'20056,927,995'Multi-bit MRAM device with switching nucleation sites'20056,928,042'Data storage device including nanotube electron sources'20056,911,710'Multi-bit magnetic memory cells'20056,905,888'Magnetic memory element having controlled nucleation site in data layer'20056,903,909'Magnetoresistive element including ferromagnetic sublayer having smoothed surface'20056,885,049'Spin dependent tunneling junctions including ferromagnetic layers having flattened peaks'20056,862,212'Multi-bit magnetic memory cells'20056,858,883'Partially processed tunnel junction control element'20056,819,586'Thermally-assisted magnetic memory structures'20046,803,616'Magnetic memory element having controlled nucleation site in data layer'20046,756,239'Method for constructing a magneto-resistive element'20046,727,105'Method of fabricating an MRAM device including spin dependent tunneling junction memory cells'20046,633,497'Resistive cross point array of short-tolerant memory cells'20036,607,924'Solid-state memory with magnetic storage cells'20036,603,678'Thermally-assisted switching of magnetic memory elements'20036,475,812'Method for fabricating cladding layer in top conductor'20026,466,475'Uniform magnetic environment for cells in an MRAM array'20026,429,497'Method for improving breakdown voltage in magnetic tunnel junctions'20026,424,565'Solid-state memory with magnetic storage cells'20026,400,600'Method of repairing defective tunnel junctions'20026,169,686'Solid-state memory with magnetic storage cells'20015,835,003'Colossal magnetoresistance sensor'1998

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1998–2003Patents assigned to HEWLETT PACKARD CO (8)· patent assignee history
1998Based in Belmont, CA, US· patent location history
2001–2011Based in Palo Alto, CA, US· patent location history
2002–2017Based in Sunnyvale, CA, US· patent location history
2003–2015Patents assigned to HEWLETT PACKARD DEVELOPMENT CO (37)· patent assignee history
2008–2009Patents assigned to SAMSUNG ELECTRONICS CO LTD (6)· patent assignee history
2012–2021Patents assigned to NICKEL JANICE H (13)· patent assignee history
2016–2018Patents assigned to HEWLETT PACKARD ENTPR DEV LP (6)· patent assignee history
2016–2021Based in Pacifica, CA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HEWLETT PACKARD DEVELOPMENT CO372003–2015
NICKEL JANICE Hself132012–2021
HEWLETT PACKARD CO81998–2003
HEWLETT PACKARD ENTPR DEV LP62016–2018
SAMSUNG ELECTRONICS CO LTD62008–2009
Locations
LocationPatentsSpan
Sunnyvale, California, US492002–2017
Pacifica, California, US52016–2021
Palo Alto, California, US52001–2011
Belmont, California, US11998