Inventor
Abhijit Bandyopadhyay
Inventor
San Jose, CA, US
Overview
Patents· 29 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices26%
G11CStatic stores20%
H10NElectric solid-state devices not otherwise provided for20%
H10DInorganic electric semiconductor devices17%
H01LSemiconductor devices12%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h101%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests1%
PatentTitleYear
10,734,073Three terminal isolation elements and methods202010,714,534Three terminal isolation elements and methods202010,374,013Methods and apparatus for three-dimensional nonvolatile memory201910,354,710Magnetoelectric random access memory array and methods of operating the same201910,032,908Multi-gate vertical field effect transistor with channel strips laterally confined by gate dielectric layers, and method of making thereof20189,859,337'Three-dimensional memory device with vertical semiconductor bit lines located in recesses and method of making thereof'20189,704,920'Resistive random access memory containing a steering element and a tunneling dielectric element'20179,472,758'High endurance non-volatile storage'20169,472,301'Dielectric-based memory cells having multi-level one-time programmable and bi-level rewriteable operating modes and methods of forming the same'20169,368,207'Method of operating FET low current 3D re-ram'20168,995,169'Method of operating FET low current 3D Re-RAM'20158,883,589'Counter doping compensation methods to improve diode performance'20148,866,124'Diodes with native oxide regions for use in memory arrays and methods of forming the same'20148,848,430'Step soft program for reversible resistivity-switching elements'20148,730,720'Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor material'20148,624,293'Carbon/tunneling-barrier/carbon diode'20148,520,425'Resistive random access memory with low current operation'20138,520,424'Composition of memory cell with resistance-switching layers'20138,482,973'Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor material'20138,450,181'In-situ passivation methods to improve performance of polysilicon diode'20138,410,582'3D polysilicon diode with low contact resistance and method for forming same'20138,385,102'Alternating bipolar forming voltage for resistivity-switching elements'20138,289,749'Soft forming reversible resistivity-switching element for bipolar switching'20128,243,509'Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor material'20128,207,064'3D polysilicon diode with low contact resistance and method for forming same'20127,888,205'Highly scalable thin film transistor'20117,177,227'Transistor layout configuration for tight-pitched memory array lines'20077,054,219'Transistor layout configuration for tight-pitched memory array lines'20066,383,855'High speed, low cost BICMOS process using profile engineering'2002Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2002Based in Cupertino, CA, US· patent location history
2006–2020Based in San Jose, CA, US· patent location history
2007–2017Patents assigned to SANDISK 3D LLC (21)· patent assignee history
2012–2014Patents assigned to BANDYOPADHYAY ABHIJIT (13)· patent assignee history
2012–2014Patents assigned to XIAO LI (6)· patent assignee history
2012–2014Patents assigned to HOU KUN (5)· patent assignee history
2016–2020Patents assigned to SANDISK TECHNOLOGIES LLC (9)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SANDISK 3D LLC | 21 | 2007–2017 |
| BANDYOPADHYAY ABHIJITself | 13 | 2012–2014 |
| SANDISK TECHNOLOGIES LLC | 9 | 2016–2020 |
| XIAO LI | 6 | 2012–2014 |
| HOU KUN | 5 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| San Jose, California, US | 28 | 2006–2020 |
| Cupertino, California, US | 1 | 2002 |