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Inventor

Haoran Xuan

Inventor
Beijing, CN

Overview

2→
Patents
2016
Patent span
Electricity
Primary field (CPC H)

Patents· 2 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices29%
H10DInorganic electric semiconductor devices29%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1029%
B82YSpecific uses or applications of nanostructures14%
PatentTitleYear
9,425,060'Method for fabricating multiple layers of ultra narrow silicon wires'20169,349,588'Method for fabricating quasi-SOI source/drain field effect transistor device'2016

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2016Patents assigned to UNIV BEIJING (2)· patent assignee history
2016Based in Beijing, CN· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
UNIV BEIJING22016
Locations
LocationPatentsSpan
Beijing, CN22016