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Inventor

Atsushi Kawasaki

Inventor
Tokyo, JP

Overview

21→
Patents
1982–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 21 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices12%
B66BElevators10%
H10BElectronic memory devices10%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
H01CResistors5%
H04LTransmission of digital information, e.g. telegraphic communication5%
B21DWorking or processing of sheet metal or metal tubes, rods or profiles without essentially removing material2%
B21HMaking particular metal objects by rolling, e.g. screws, wheels, rings, barrels, balls2%
B21JForging2%
B29CShaping or joining of plastics2%
PatentTitleYear
11,110,928Information processing apparatus, vehicle, information processing method, and computer program product202110,533,653Motor with speed reduction mechanism202010,469,004Motor drive apparatus and motor drive method201910,300,522Forming method for disk-shaped component and forming device for disk-shaped component201910,056,878Acoustic wave device and method of fabricating the same20189,481,552'Moving handrail for passenger conveyor, and device for manufacturing moving handrail for passenger conveyor'20169,290,360'Endless escalator handrail and escalator'20168,186,498'Handrail for passenger conveyor'20127,389,866'Device and method for repairing moving handrail of passenger conveyor'20087,272,648'Network monitoring device and method'20076,839,319'Office recognition method in ring network'20056,656,781'METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, HAVING FIRST AND SECOND SEMICONDUCTOR REGIONS WITH FIELD SHIELD ISOLATION STRUCTURES AND A FIELD OXIDE FILM COVERING A JUNCTION BETWEEN SEMICONDUCTOR REGIONS'20036,486,013'Method of manufacturing a semiconductor device having regions of different conductivity types isolated by field oxide'20026,482,692'METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, HAVING FIRST AND SECOND SEMICONDUCTOR REGIONS WITH FIELD SHIELD ISOLATION STRUCTURES AND A FIELD OXIDE FILM COVERING A JUNCTION BETWEEN SEMICONDUCTOR REGIONS'20026,201,275'Semiconductor device having semiconductor regions of different conductivity types isolated by field oxide, and method of manufacturing the same'20015,191,202'Photoelectric conversion device'19935,017,018'Clinical thermometer'19914,678,542'Self-alignment process for thin film diode array fabrication'19874,361,315'Sonde apparatus for blast furnace'19824,317,103'Variable resistor'19824,314,229'Fader controlling variable resistor'1982

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1982–2003Patents assigned to NIPPON STEEL CORP (7)· patent assignee history
1982Based in Tokorozawa, JP· patent location history
1991–2007Based in Kawasaki, JP· patent location history
1993–2019Based in Tokyo, JP· patent location history
2005–2007Patents assigned to FUJITSU LTD (2)· patent assignee history
2008–2016Patents assigned to MITSUBISHI ELECTRIC CORP (4)· patent assignee history
2012–2016Patents assigned to KAWASAKI ATSUSHI (2)· patent assignee history
2019–2020Patents assigned to MITSUBA CORP (2)· patent assignee history
2020Based in Gunma, JP· patent location history
2021Based in Yokohama, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
NIPPON STEEL CORP71982–2003
MITSUBISHI ELECTRIC CORP42008–2016
FUJITSU LTD22005–2007
KAWASAKI ATSUSHIself22012–2016
MITSUBA CORP22019–2020
Locations
LocationPatentsSpan
Tokyo, JP111993–2019
Kawasaki, JP31991–2007
Tokorozawa, JP21982
Yokohama, JP12021
Gunma, JP12020