Inventor
Heinz Schmid
Inventor
Waedenswil, CH
Overview
Patents· 51 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices9%
H10DInorganic electric semiconductor devices8%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%
B01JChemical or physical processes, e.g. catalysis or colloid chemistry5%
B82YSpecific uses or applications of nanostructures5%
C40BCombinatorial chemistry5%
B01LChemical or physical laboratory apparatus for general use5%
G01NInvestigating or analysing materials by determining their chemical or physical properties4%
H05KPrinted circuits4%
PatentTitleYear
10,965,101Plasmonic quantum well laser202110,840,093Fabrication of semiconductor substrates202010,727,051Semiconductor nanowire fabrication202010,679,942Electrical junction for facilitating an integration of electrical crossing202010,671,907Electrical junction202010,566,764Plasmonic quantum well laser202010,559,657Fabrication of semiconductor junctions202010,529,771Array of optoelectronic structures and fabrication thereof202010,411,092Fabrication of semiconductor junctions201910,297,739Parafermion braiding device201910,153,158Semiconductor nanowire fabrication201810,066,312Device for producing a mono-crystalline sheet of semiconductor material from a molten alloy held between at least two aperture elements201810,014,373Fabrication of semiconductor junctions20189,978,872Non-polar, III-nitride semiconductor fin field-effect transistor20189,923,022'Array of optoelectronic structures and fabrication thereof'20189,768,251'Method for manufacturing a semiconductor structure, semiconductor structure, and electronic device'20179,620,360'Fabrication of semiconductor junctions'20179,487,884'Producing a mono-crystalline sheet of semiconductor material'20168,969,931'Semiconductor devices with screening coating to inhibit dopant deactivation'20158,754,401'Impact ionization field-effect transistor'20148,680,510'Method of forming compound semiconductor'20148,453,569'Stamp with permeable hydrophylic matrix'20138,336,456'Printing in a medium'20128,268,544'Stamp for patterning, method for manufacturing such stamp and method for manufacturing an object using the stamp'20128,267,011'Stamp with drainage channels for transferring a pattern in the presence of a third medium'20128,193,524'Nanoelectronic device'20128,129,763'Metal-oxide-semiconductor device including a multiple-layer energy filter'20128,022,447'Metal-oxide-semiconductor device including an energy filter'20117,947,580'Hybrid semiconductor structure'20117,891,295'Printing in a medium'20117,759,729'Metal-oxide-semiconductor device including an energy filter'20107,740,472'Method and device for flowing a liquid on a surface'20107,695,687'Capillary system for controlling the flow rate of fluids'20107,686,886'Controlled shape semiconductor layer by selective epitaxy under seed structure'2010D0609941'News rack'20107,491,272'Confinement of liquids on surfaces'20097,434,512'Printing in a medium'20087,329,111'Method and device for flowing a liquid on a surface'20087,041,232'Selective etching of substrates with control of the etch profile'20067,000,454'Particle measurement configuration and semiconductor wafer processing device with such a configuration'2006D0513996'Wall-standing clock'20066,976,424'Stamp device for printing a pattern on a surface of a substrate'20056,798,464'Liquid crystal display'20046,569,575'Optical lithography beyond conventional resolution limits'20036,537,499'Method and device for identification of a substance'20036,326,058'Device for patterning a substrate with patterning cavities'20016,089,853'Patterning device for patterning a substrate with patterning cavities fed by service cavities'20005,654,548'Source for intense coherent electron pulses'19975,059,804'Delta-phi microlens for low-energy particle beams'19914,954,711'Low-voltage source for narrow electron/ion beams'19904,919,780'Method of making self-aligned apertures'1990Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1990–2021Patents assigned to IBM (47)· patent assignee history
1990–2001Based in Oberrieden, CH· patent location history
2003–2021Based in Waedenswil, CH· patent location history
2006–2010Based in Augsburg, DE· patent location history
2012–2016Patents assigned to SCHMID HEINZ (10)· patent assignee history
2012–2016Patents assigned to RIEL HEIKE E (6)· patent assignee history
2012–2016Patents assigned to BJOERK MIKAEL T (5)· patent assignee history
2012–2015Patents assigned to KNOCH JOACHIM (4)· patent assignee history
2012–2020Based in Rueschlikon, CH· patent location history
2020Based in Waede, CH· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 47 | 1990–2021 |
| SCHMID HEINZself | 10 | 2012–2016 |
| RIEL HEIKE E | 6 | 2012–2016 |
| BJOERK MIKAEL T | 5 | 2012–2016 |
| KNOCH JOACHIM | 4 | 2012–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Waedenswil, CH | 30 | 2003–2021 |
| Rueschlikon, CH | 10 | 2012–2020 |
| Oberrieden, CH | 6 | 1990–2001 |
| Augsburg, DE | 2 | 2006–2010 |
| Waede, CH | 1 | 2020 |