Inventor

Robert Bruce van Dover

Inventor
Maplewood, NJ, US

Overview

36→
Patents
1988–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 36 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Fprimary
H01FMagnets18%
H10DInorganic electric semiconductor devices14%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests9%
C04BLime, magnesia6%
H10NElectric solid-state devices not otherwise provided for6%
Y10TTechnical subjects covered by former us classification6%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
B82YSpecific uses or applications of nanostructures4%
H03HImpedance networks, e.g. resonant circuits4%
PatentTitleYear
10,879,539Mixed metal oxide compounds and electrocatalytic compositions, devices and processes using the same20207,135,438'Method of making cuprate superconducting material'20067,021,518'Micromagnetic device for power processing applications and method of manufacture therefor'20067,015,056'Electro-mechanical device having a charge dissipation layer and a method of manufacture therefor'20066,869,815'Electro-mechanical device having a charge dissipation layer and a method of manufacture therefor'20056,716,488'Ferrite film formation method'20046,696,744'Integrated circuit having a micromagnetic device and method of manufacture therefor'20046,649,422'Integrated circuit having a micromagnetic device and method of manufacture therefor'20036,638,894'Devices and systems based on novel superconducting material'20036,635,603'Devices and systems based on novel superconducting material'20036,630,425'Devices and systems based on novel superconducting material'20036,590,241'MOS transistors with improved gate dielectrics'20036,573,818'Planar magnetic frame inductors having open cores'20036,440,750'Method of making integrated circuit having a micromagnetic device'20026,437,392'Article comprising a dielectric material of ZR-Ge-Ti-O or Hf-Ge-Ti-O and method of making the same'20026,320,479'Magnetostrictive surface acoustic wave devices having optimized transducers'20016,291,402'Method of making a superconductive oxide body'20016,255,714'Integrated circuit having a micromagnetic device including a ferromagnetic core and method of manufacture therefor'20016,191,495'Micromagnetic device having an anisotropic ferromagnetic core and method of manufacture therefor'20016,163,234'Micromagnetic device for data transmission applications and method of manufacture therefor'20006,160,721'Micromagnetic device for power processing applications and method of manufacture therefor'20006,118,351'Micromagnetic device for power processing applications and method of manufacture therefor'20006,060,406'MOS transistors with improved gate dielectrics'20006,046,657'Magnetostrictive surface acoustic wave device and microelectronic circuit including same'20005,998,048'Article comprising anisotropic Co-Fe-Cr-N soft magnetic thin films'19995,976,715'Articles comprising magnetically soft thin films'19995,977,582'Capacitor comprising improved TaO.sub.x -based dielectric'19995,956,073'Noise-limiting transformer apparatus and method for making'19995,912,797'Dielectric materials of amorphous compositions and devices employing same'19995,847,634'Article comprising an inductive element with a magnetic thin film'19985,780,175'Articles comprising magnetically soft thin films and methods for making such articles'19985,744,972'Device and method to measure the complex permeability of thin films at ultra-high frequencies'19985,728,421'Article comprising spinel-structure material on a substrate, and method of making the article'19985,665,465'Article comprising exchange-coupled magnetic materials'19974,952,554'Apparatus and systems comprising a clad superconductive oxide body, and method for producing such body'19904,785,244'Magneto-electric sensor device and sensing method using a sensor element comprising a 2-phase decomposed microstructure'1988

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1988Patents assigned to AMERICAN TELEPHONE & TELEGRAPH (1)· patent assignee history
1988Based in Gillette, NJ, US· patent location history
1990–2006Based in Berkeley Heights, NJ, US· patent location history
1997–2006Patents assigned to LUCENT TECHNOLOGIES INC (20)· patent assignee history
1997–2006Based in Maplewood, NJ, US· patent location history
2001–2002Patents assigned to AGERE SYST GUARDIAN CORP (2)· patent assignee history
2001–2002Patents assigned to AGERE SYST OPTOELECTRONICS (2)· patent assignee history
2003–2006Patents assigned to AGERE SYSTEMS INC (8)· patent assignee history
2020Based in Ithaca, NY, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
LUCENT TECHNOLOGIES INC201997–2006
AGERE SYSTEMS INC82003–2006
AGERE SYST GUARDIAN CORP22001–2002
AGERE SYST OPTOELECTRONICS22001–2002
AMERICAN TELEPHONE & TELEGRAPH11988
Locations
LocationPatentsSpan
Maplewood, New Jersey, US281997–2006
Berkeley Heights, New Jersey, US61990–2006
Ithaca, New York, US12020
Gillette, New Jersey, US11988