Inventor
Stefan Bader
Inventor
Fort Collins, CO, US
Overview
Patents· 39 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers29%
H03HImpedance networks, e.g. resonant circuits22%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light10%
B82YSpecific uses or applications of nanostructures8%
H01LSemiconductor devices6%
C23CCoating metallic material4%
H10NElectric solid-state devices not otherwise provided for4%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
C30BSingle-crystal growth3%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
PatentTitleYear
10,404,231Acoustic resonator device with an electrically-isolated layer of high-acoustic-impedance material interposed therein20199,917,567'Bulk acoustic resonator comprising aluminum scandium nitride'20189,853,626Acoustic resonator comprising acoustic redistribution layers and lateral features20179,680,439'Method of fabricating acoustic resonator with planarization layer'20179,679,765'Method of fabricating rare-earth doped piezoelectric material with various amounts of dopants and a selected C-axis orientation'20179,634,642'Acoustic resonator comprising vertically extended acoustic cavity'20179,548,438'Acoustic resonator comprising acoustic redistribution layers'20179,525,399'Planarized electrode for improved performance in bulk acoustic resonators'20169,154,111'Double bulk acoustic resonator comprising aluminum scandium nitride'20159,148,117'Coupled resonator filter comprising a bridge and frame elements'20159,136,818'Stacked acoustic resonator comprising a bridge'20159,083,302'Stacked bulk acoustic resonator comprising a bridge and an acoustic reflector along a perimeter of the resonator'20158,872,604'Double film bulk acoustic resonators with electrode layer and piezo-electric layer thicknesses providing improved quality factor'20148,809,086'Method for fabricating a semiconductor component based on GaN'20148,797,123'Double film bulk acoustic resonator having electrode edge alignments providing improved quality factor or electromechanical coupling coefficient'20148,673,121'Method of fabricating piezoelectric materials with opposite C-axis orientations'20148,575,820'Stacked bulk acoustic resonator'20138,426,843'Radiation-emitting semiconductor body'20138,129,209'Method for fabricating a semiconductor component based on GaN'20127,709,851'Light-emitting diode chip including a mirror layer and a light-generating active zone'20107,691,656'Method for fabricating a semiconductor component based on GaN'20107,691,659'Radiation-emitting semiconductor element and method for producing the same'20107,655,488'Method for fabricating a plurality of electromagnetic radiation emitting semiconductor chips'20107,642,565'Radiation-emitting semiconductor component based on gallium nitride, and method for fabricating the semiconductor component'20107,556,974'Optical semiconductor device with multiple quantum well structure'20097,446,341'Radiation-emitting semiconductor element'20087,442,966'Electromagnetic radiation emitting semiconductor chip and procedure for its production'20087,425,237'Method for depositing a material on a substrate wafer'20087,319,247'Light emitting-diode chip and a method for producing same'20087,294,520'Method for fabricating a plurality of semiconductor bodies, and electronic semiconductor body'20077,129,528'Electromagnetic radiation emitting semiconductor chip and procedure for its production'20067,105,370'Method for fabricating a radiation-emitting semiconductor chip based on III-V nitride semiconductor'20067,106,090'Optical semiconductor device with multiple quantum well structure'20067,005,681'Radiation-emitting semiconductor component and method for making same'20066,927,155'Process for producing semiconductor layers based on III-V nitride semiconductors'20056,878,563'Radiation-emitting semiconductor element and method for producing the same'20056,849,878'Method for fabricating a radiation-emitting semiconductor chip based on III-V nitride semiconductor, and radiation-emitting semiconductor chip'20056,849,881'Optical semiconductor device comprising a multiple quantum well structure'20055,520,169'Anesthesia arrangement for recovering gaseous anesthetic agents'1996Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2005–2014Patents assigned to OSRAM GMBH (12)· patent assignee history
2005–2013Patents assigned to OSRAM OPTO SEMICONDUCTORS GMBH (9)· patent assignee history
2005–2014Based in Eilsbrunn, DE· patent location history
2005–2006Based in Sinzing, DE· patent location history
2006–2010Based in Regensburg, DE· patent location history
2012–2016Patents assigned to BADER STEFAN (11)· patent assignee history
2013–2019Patents assigned to AVAGO TECHNOLOGIES GENERAL IP (16)· patent assignee history
2013–2016Patents assigned to BURAK DARIUSZ (7)· patent assignee history
2013–2019Based in Fort Collins, CO, US· patent location history
2013Based in Matting b. Pentling, DE· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| AVAGO TECHNOLOGIES GENERAL IP | 16 | 2013–2019 |
| OSRAM GMBH | 12 | 2005–2014 |
| BADER STEFANself | 11 | 2012–2016 |
| OSRAM OPTO SEMICONDUCTORS GMBH | 9 | 2005–2013 |
| BURAK DARIUSZ | 7 | 2013–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Fort Collins, CO, US | 16 | 2013–2019 |
| Eilsbrunn, DE | 15 | 2005–2014 |
| Regensburg, DE | 2 | 2006–2010 |
| Sinzing, DE | 2 | 2005–2006 |
| Matting b. Pentling, DE | 1 | 2013 |