Inventor
Kevin Beernink
Inventor
Clarkston, MI, US
Overview
Patents· 16 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Sprimary
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light19%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation19%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution19%
B82YSpecific uses or applications of nanostructures12%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
B23KSoldering or unsoldering2%
B29CShaping or joining of plastics2%
B29KIndexing scheme associated with subclasses b29b, b29c or b29d, relating to moulding materials or to materials for moulds, reinforcements, fillers or preformed parts, e.g. inserts2%
B32BLayered products, i.e. products built-up of strata of flat or non-flat, e.g. cellular or honeycomb, form2%
PatentTitleYear
8,168,881'Monolithic photovoltaic module'20127,964,476'Method and apparatus for the laser scribing of ultra lightweight semiconductor devices'20117,947,149'Lamination process and roller for use therein'20117,638,353'Method for fabrication of semiconductor devices on lightweight substrates'20097,517,465'Ultra lightweight photovoltaic device and method for its manufacture'20097,176,543'Method of eliminating curl for devices on thin flexible substrates, and devices made thereby'20076,803,513'Series connected photovoltaic module and method for its manufacture'20046,423,595'Method for scribing a semiconductor device'20025,843,802'Semiconductor laser formed by layer intermixing'19985,766,981'Thermally processed, phosphorus- or arsenic-containing semiconductor laser with selective IILD'19985,764,676'Transversely injected multiple wavelength diode laser array formed by layer disordering'19985,745,517'Alternative doping for AlGaInP laser diodes fabricated by impurity-induced layer disordering (IILD)'19985,717,707'Index guided semiconductor laser diode with reduced shunt leakage currents'19985,708,674'Semiconductor laser or array formed by layer intermixing'19985,436,193'Method of fabricating a stacked active region laser array'19955,386,428'Stacked active region laser array for multicolor emissions'1995Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1995–1998Patents assigned to XEROX CORP (8)· patent assignee history
1995–1998Based in Mountain View, CA, US· patent location history
1998Based in Urbana, IL, US· patent location history
2002–2004Patents assigned to UNITED SOLAR SYSTEMS CORP (2)· patent assignee history
2002–2012Based in Clarkston, MI, US· patent location history
2009–2012Patents assigned to UNITED SOLAR OVONIC LLC (5)· patent assignee history
2012Patents assigned to BEERNINK KEVIN (1)· patent assignee history
2012Patents assigned to LIU SHENGZHONG (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| XEROX CORP | 8 | 1995–1998 |
| UNITED SOLAR OVONIC LLC | 5 | 2009–2012 |
| UNITED SOLAR SYSTEMS CORP | 2 | 2002–2004 |
| BEERNINK KEVINself | 1 | 2012 |
| LIU SHENGZHONG | 1 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Clarkston, MI, US | 8 | 2002–2012 |
| Mountain View, California, US | 6 | 1995–1998 |
| Urbana, Illinois, US | 2 | 1998 |