Inventor
Martin L. Green
Inventor
Summit, NJ, US
Overview
Patents· 17 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1033%
H10DInorganic electric semiconductor devices23%
C23CCoating metallic material8%
H01FMagnets5%
H10HInorganic light-emitting semiconductor devices having potential barriers5%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
B22FWorking metallic powder3%
C21DModifying the physical structure of ferrous metals3%
C22CAlloys3%
C23FNon-mechanical removal of metallic material from surface3%
PatentTitleYear
7,456,064'High K dielectric material and method of making a high K dielectric material'20087,223,677'Process for fabricating a semiconductor device having an insulating layer formed over a semiconductor substrate'20076,797,525'Fabrication process for a semiconductor device having a metal oxide dielectric material with a high dielectric constant, annealed with a buffered anneal process'20046,723,581'Semiconductor device having a high-K gate dielectric and method of manufacture thereof'20046,680,130'High K dielectric material and method of making a high K dielectric material'20045,904,523'Process for device fabrication in which a layer of oxynitride is formed at low temperatures'19995,863,843'Wafer holder for thermal processing apparatus'19995,861,651'Field effect devices and capacitors with improved thin film dielectrics and method for making same'19995,814,562'Process for semiconductor device fabrication'19985,442,205'Semiconductor heterostructure devices with strained semiconductor layers'19955,221,413'Method for making low defect density semiconductor heterostructure and devices made thereby'19934,968,644'Method for fabricating devices and devices formed thereby'19904,851,895'Metallization for integrated devices'19894,716,050'Chemical vapor deposition of aluminum on an activated surface'19874,475,983'Base metal composite electrical contact material'19844,401,482'Fe--Cr--Co Magnets by powder metallurgy processing'19834,311,537'Low-cobalt Fe-Cr-Co permanent magnet alloy processing'1982Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1982–1983Patents assigned to BELL TELEPHONE LABOR INC (2)· patent assignee history
1982–1995Based in New Providence, NJ, US· patent location history
1984–1993Patents assigned to AT & T BELL LAB (3)· patent assignee history
1987–1989Patents assigned to AMERICAN TELEPHONE & TELEGRAPH (2)· patent assignee history
1998–1999Patents assigned to LUCENT TECHNOLOGIES INC (4)· patent assignee history
1998–2008Based in Summit, NJ, US· patent location history
2004–2008Patents assigned to AGERE SYSTEMS INC (5)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| AGERE SYSTEMS INC | 5 | 2004–2008 |
| LUCENT TECHNOLOGIES INC | 4 | 1998–1999 |
| AT & T BELL LAB | 3 | 1984–1993 |
| AMERICAN TELEPHONE & TELEGRAPH | 2 | 1987–1989 |
| BELL TELEPHONE LABOR INC | 2 | 1982–1983 |
Locations
| Location | Patents | Span |
|---|---|---|
| Summit, New Jersey, US | 9 | 1998–2008 |
| New Providence, New Jersey, US | 8 | 1982–1995 |