Inventor
Min-Sang Kim
Inventor
Seoul, KR
Overview
Patents· 72 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices16%
H10BElectronic memory devices14%
G02BOptical elements, systems or apparatus8%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein6%
G11CStatic stores5%
B82YSpecific uses or applications of nanostructures5%
H01LSemiconductor devices4%
H10KOrganic electric solid-state devices3%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
PatentTitleYear
10,924,154Electronic device for transmitting or receiving signal and method therefor202110,779,400Flexible display device202010,727,434Display device with structure for preventing organic material overflow202010,684,428Front light unit and image display device202010,645,802Flexible display device202010,609,829Display device202010,462,896Flexible display device201910,418,587Display device20199,975,997Compositions, composites prepared therefrom, and films and electronic devices including the same20189,775,803'Liposome comprising elastin-like polypeptide and tumor cell targeting material and use thereof'20179,690,519'Solid state drive card and an electronic system including the same'20179,519,099'Backlight unit and display apparatus using the same'20169,439,858'Temperature sensitive liposome including cationic lipid and use thereof'2016D0735204'Solid state drive'2015D0735202'Solid state drive'2015D0735203'Solid state drive'2015D0734755'Solid state drive'20159,080,049'PH-sensitive graft copolymer, manufacturing method for same, and polymer micelles using method'20159,069,110'Backlight unit and display device'20158,876,319'Backlight unit and display apparatus using the same'20148,858,011'Backlight unit and display apparatus using the same'20148,835,492'Temperature and pH sensitive block copolymer and polymeric hydrogels using the same'20148,835,993'Gate-all-around integrated circuit devices'20148,814,377'Backlight unit and display apparatus using the same'20148,684,547'Backlight unit and display apparatus using the same'20148,680,588'Field effect transistor with buried gate pattern'20148,525,147'Semiconductor devices including a transistor with elastic channel'20138,511,885'Light emitting device assembly, backlight unit and display device having the same'20138,506,154'Optical assembly and display apparatus thereof'20138,398,874'Methods of manufacturing semiconductors using dummy patterns'20138,391,057'Switch and method of forming the same'20138,353,601'Optical assembly, backlight unit having the same, and display apparatus thereof'20138,322,904'Backlight unit, and display apparatus thereof'20128,318,204'pH sensitive block copolymer and polymeric micelle using the same'20128,277,089'Back light unit'20128,270,211'Electromechanical switch and method of forming the same'20128,222,067'Method of manufacturing multibit electro-mechanical memory device having movable electrode'20128,212,766'Backlight unit and display device'20128,168,492'Field effect transistors with vertically oriented gate electrodes and methods for fabricating the same'20128,129,777'Semiconductor device having a multi-channel type MOS transistor'20128,129,800'Gate-all-around integrated circuit devices'20128,106,464'Semiconductor device having bar type active pattern'20128,033,676'Optical assembly, backlight unit having the same, and display apparatus thereof'20117,972,914'Semiconductor device with FinFET and method of fabricating the same'20117,973,343'Multibit electro-mechanical memory device having cantilever electrodes'20117,943,998'Nonvolatile memory devices having stacked structures and methods of fabricating the same'20117,939,436'Method of fabricating a semiconductor device'20117,935,600'Method of manufacturing multi-channel transistor device and multi-channel transistor device manufactured using the method'20117,929,341'Electromechanical switch and method of forming the same'20117,911,011'Methods of fabricating electromechanical non-volatile memory devices'20117,897,463'Methods of fabricating vertical twin-channel transistors'20117,871,875'Fin field effect transistor and method of manufacturing the same'20117,868,401'Multibit electro-mechanical memory device having at least one cantilever electrode and at least one gate line and manufacturing method thereof'20117,821,821'Multibit electro-mechanical device and method of manufacturing the same'20107,790,494'Method of fabricating a multi-bit electro-mechanical memory device'20107,791,936'Multibit electro-mechanical memory device and method of manufacturing the same'20107,786,220'pH and temperature sensitive hydrogels'20107,723,797'Fin field effect transistor and method of manufacturing the same'20107,719,068'Multi-bit electro-mechanical memory device and method of manufacturing the same'20107,709,356'Methods of forming a pattern and methods of manufacturing a memory device using the same'20107,696,046'Method of manufacturing a semiconductor device having a multi-channel type MOS transistor'20107,675,142'Electromechanical non-volatile memory devices'20107,655,988'Method of manufacturing multi-channel transistor device and multi-channel transistor device manufactured using the method'20107,605,025'Methods of forming MOSFETS using crystalline sacrificial structures'20097,525,148'Nonvolatile memory device'20097,511,998'Non-volatile memory device and method of fabricating the same'20097,439,150'Method of manufacturing a semiconductor device'20087,361,956'Semiconductor device having partially insulated field effect transistor (PiFET) and method of fabricating the same'20087,361,545'Field effect transistor with buried gate pattern'20087,332,386'Methods of fabricating fin field transistors'20087,256,091'Method of manufacturing a semiconductor device with a self-aligned polysilicon electrode'20076,642,135'Method for forming semiconductor memory device having a fuse'2003Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2003–2021Patents assigned to SAMSUNG ELECTRONICS CO LTD (48)· patent assignee history
2003–2020Based in Seoul, KR· patent location history
2011–2020Patents assigned to LG INNOTEK CO LTD (14)· patent assignee history
2012–2017Patents assigned to KIM MIN SANG (15)· patent assignee history
2012–2014Patents assigned to KIM MIN-SANG (11)· patent assignee history
2012–2014Patents assigned to KIM MOON JEONG (8)· patent assignee history
2012–2021Based in Suwon-si, KR· patent location history
2015–2017Based in Hwaseong-si, KR· patent location history
2016–2018Based in Anseong-si, KR· patent location history
2019–2020Based in Yongin-si, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 48 | 2003–2021 |
| KIM MIN SANGself | 15 | 2012–2017 |
| LG INNOTEK CO LTD | 14 | 2011–2020 |
| KIM MIN-SANGself | 11 | 2012–2014 |
| KIM MOON JEONG | 8 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Seoul, KR | 53 | 2003–2020 |
| Suwon-si, KR | 7 | 2012–2021 |
| Hwaseong-si, KR | 5 | 2015–2017 |
| Yongin-si, KR | 3 | 2019–2020 |
| Anseong-si, KR | 3 | 2016–2018 |