Inventor
Eric C. Harley
Inventor
Lagrangeville, NY, US
Overview
Patents· 29 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices38%
H01LSemiconductor devices25%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
G01NInvestigating or analysing materials by determining their chemical or physical properties4%
B82YSpecific uses or applications of nanostructures1%
C30BSingle-crystal growth1%
G01BMeasuring length, thickness or similar linear dimensions1%
H01JElectric discharge tubes or discharge lamps1%
H10BElectronic memory devices1%
PatentTitleYear
11,081,583FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth202110,615,279FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth202010,243,077FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth20199,917,190'FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth'20189,752,251'Self-limiting selective epitaxy process for preventing merger of semiconductor fins'20179,577,099'Diamond shaped source drain epitaxy with underlying buffer layer'20179,577,100'FinFET and nanowire semiconductor devices with suspended channel regions and gate structures surrounding the suspended channel regions'20179,536,985'Epitaxial growth of material on source/drain regions of FinFET structure'20179,466,616'Uniform junction formation in FinFETs'20169,412,843'Method for embedded diamond-shaped stress element'20169,390,884'Method of inspecting a semiconductor substrate'20169,318,608'Uniform junction formation in FinFETs'20169,312,364'finFET with dielectric isolation after gate module for improved source and drain region epitaxial growth'20169,287,264'Epitaxially grown silicon germanium channel FinFET with silicon underlayer'20169,246,003'FINFET structures with fins recessed beneath the gate'20169,236,477'Graphene transistor with a sublithographic channel width'20169,219,114'Partial FIN on oxide for improved electrical isolation of raised active regions'20159,123,826'Single crystal source-drain merged by polycrystalline material'20158,987,093'Multigate finFETs with epitaxially-grown merged source/drains'20158,716,037'Measurement of CMOS device channel strain by X-ray diffraction'20148,618,617'Field effect transistor device'20138,492,234'Field effect transistor device'20138,361,859'Stressed transistor with improved metastability'20138,232,186'Methods of integrating reverse eSiGe on NFET and SiGe channel on PFET, and related structure'20128,084,788'Method of forming source and drain of a field-effect-transistor and structure thereof'20118,080,451'Fabricating semiconductor structures'20117,955,936'Semiconductor fabrication process including an SiGe rework method'20117,769,134'Measuring strain of epitaxial films using micro x-ray diffraction for in-line metrology'20107,687,804'Method for fabricating a semiconductor structures and structures thereof'2010Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2010–2021Patents assigned to IBM (20)· patent assignee history
2010–2021Based in Lagrangeville, NY, US· patent location history
2011–2014Patents assigned to HOLT JUDSON R (5)· patent assignee history
2011–2013Patents assigned to HARLEY ERIC C T (4)· patent assignee history
2011–2014Patents assigned to ADAM THOMAS N (3)· patent assignee history
2013–2017Patents assigned to GLOBALFOUNDRIES INC (12)· patent assignee history
2016–2017Based in Bel Air, MD, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 20 | 2010–2021 |
| GLOBALFOUNDRIES INC | 12 | 2013–2017 |
| HOLT JUDSON R | 5 | 2011–2014 |
| HARLEY ERIC C Tself | 4 | 2011–2013 |
| ADAM THOMAS N | 3 | 2011–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Lagrangeville, New York, US | 27 | 2010–2021 |
| Bel Air, Maryland, US | 2 | 2016–2017 |