Inventor
Susumu Sonokawa
Inventor
Nishishirakawa, JP
Overview
Patents· 19 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth54%
Y10TTechnical subjects covered by former us classification23%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
H01LSemiconductor devices6%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%
H10DInorganic electric semiconductor devices3%
PatentTitleYear
10,036,100Apparatus for producing silicon single crystal20189,777,394'Method of producing silicon single crystal ingot'20179,422,635'Single crystal production apparatus and single crystal production method having pedestal with grooves'20169,337,013'Silicon wafer and method for producing the same'20169,260,796'Method for measuring distance between lower end surface of heat insulating member and surface of raw material melt and method for controlling thereof'20169,234,296'Apparatus having heat insulating cylinder with step portion for manufacturing semiconductor single crystal'20169,200,380'Single-crystal manufacturing method and single-crystal manufacturing apparatus'20158,441,623'Method for detecting the diameter of a single crystal and single crystal pulling apparatus'20137,594,966'Method for producing a single crystal'20097,396,405'Single crystal, single crystal wafer, epitaxial wafer, and method of growing single crystal'20087,204,881'Silicon wafer for epitaxial growth, an epitaxial wafer, and a method for producing it'20077,201,801'Heater for manufacturing a crystal'20076,565,822'Epitaxial silicon wafer, method for producing the same and subtrate for epitaxial silicon wafer'20036,506,251'Method for producing silicon single crystal'20036,228,165'Method of manufacturing crystal of silicon using an electric potential'20015,972,106'Device and method for producing single crystal'19995,882,398'Method of manufacturing single crystal of silicon'19995,269,875'Method of adjusting concentration of oxygen in silicon single crystal and apparatus for use in the method'19935,131,974'Method of controlling oxygen concentration in single crystal and an apparatus therefor'1992Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1992–2018Patents assigned to SHINETSU HANDOTAI KK (18)· patent assignee history
1992Based in Takefu, JP· patent location history
1993Based in Takehu, JP· patent location history
1999–2018Based in Nishishirakawa, JP· patent location history
2003–2009Based in Fukushima, JP· patent location history
2013–2016Patents assigned to SONOKAWA SUSUMU (6)· patent assignee history
2016Patents assigned to HOSHI RYOJI (2)· patent assignee history
2016Patents assigned to IWASAKI ATSUSHI (2)· patent assignee history
2016Patents assigned to FUSEGAWA IZUMI (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SHINETSU HANDOTAI KK | 18 | 1992–2018 |
| SONOKAWA SUSUMUself | 6 | 2013–2016 |
| HOSHI RYOJI | 2 | 2016 |
| IWASAKI ATSUSHI | 2 | 2016 |
| FUSEGAWA IZUMI | 1 | 2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Nishishirakawa, JP | 12 | 1999–2018 |
| Fukushima, JP | 5 | 2003–2009 |
| Takehu, JP | 1 | 1993 |
| Takefu, JP | 1 | 1992 |