Inventor

Masami Yamaoka

Inventor

Anjo, JP

Overview

1987–2006

Patent span

Electricity

Primary field (CPC H)

Patents· 30 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices40%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests23%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1019%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation3%

C23CCoating metallic material1%

H03KPulse technique1%

Y10TTechnical subjects covered by former us classification1%

PatentTitleYear

7,064,033'Semiconductor device and method of manufacturing same'2006 6,949,434'Method of manufacturing a vertical semiconductor device'2005 6,903,417'Power semiconductor device'2005 6,649,478'Semiconductor device and method of manufacturing same'2003 6,498,366'Semiconductor device that exhibits decreased contact resistance between substrate and drain electrode'2002 5,994,187'Method of manufacturing a vertical semiconductor device'1999 5,876,861'Sputter-deposited nickel layer'1999 5,798,550'Vertical type semiconductor device and gate structure'1998 5,689,130'Vertical semiconductor device with ground surface providing a reduced ON resistance'1997 5,663,096'Method of manufacturing a vertical semiconductor device with ground surface providing a reduced ON resistance'1997 5,596,217'Semiconductor device including overvoltage protection diode'1997 5,461,253'Semiconductor substrate structure for producing two isolated circuits on a same substrate'1995 5,360,765'Method of forming electrodes of semiconductor device'1994 5,313,092'Semiconductor power device having walls of an inverted mesa shape to improve power handling capability'1994 5,264,720'High withstanding voltage transistor'1993 5,250,449'Vertical type semiconductor device and method for producing the same'1993 5,248,623'Method for making a polycrystalline diode having high breakdown'1993 5,242,862'Semiconductor device and method of manufacturing same'1993 5,204,282'Semiconductor circuit structure and method for making the same'1993 5,168,337'Polycrystalline diode and a method for making the same'1992 5,164,218'Semiconductor device and a method for producing the same'1992 5,136,348'Structure and manufacturing method for thin-film semiconductor diode device'1992 5,128,823'Power semiconductor apparatus'1992 5,072,277'Semiconductor device with gradually varying doping levels to compensate for thickness variations'1991 4,994,880'Semiconductor device constituting bipolar transistor'1991 4,896,199'Semiconductor device with protective means against overheating'1990 4,879,254'Method of manufacturing a DMOS'1989 4,760,434'Semiconductor device with protective means against overheating'1988 4,680,608'Semiconductor device'1987 4,672,402'Semiconductor circuit device including an overvoltage protection element'1987

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1987–1999Patents assigned to NIPPON DENSO CO (21)· patent assignee history

1987–2006Based in Anjo, JP· patent location history

1992–1995Patents assigned to NIPPON SOKEN (4)· patent assignee history

1992–1995Based in Anjyo, JP· patent location history

2002–2006Patents assigned to DENSO CORP (5)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
NIPPON DENSO CO	21	1987–1999
DENSO CORP	5	2002–2006
NIPPON SOKEN	4	1992–1995

Locations

Location	Patents	Span
Anjo, JP	26	1987–2006
Anjyo, JP	4	1992–1995