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Inventor

Ming-Jeng Huang

Inventor
Taichung, TW

Overview

4→
Patents
2006–2014
Patent span
Electricity
Primary field (CPC H)

Patents· 4 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Fprimary
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation43%
H01LSemiconductor devices14%
H10BElectronic memory devices14%
H10NElectric solid-state devices not otherwise provided for14%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution14%
PatentTitleYear
8,697,986'Photovoltaic device with double-junction'20147,858,961'Phase change memory devices and methods for fabricating the same'20107,411,276'Photosensitive device'20087,125,738'Method of fabricating a photosensitive structure'2006

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2006–2008Patents assigned to POWERCHIP SEMICONDUCTOR CORP (2)· patent assignee history
2006–2010Based in Taichung, TW· patent location history
2010Patents assigned to IND TECH RES INST (1)· patent assignee history
2014Patents assigned to AU OPTRONICS CORP (1)· patent assignee history
2014Patents assigned to HUANG MING-JENG (1)· patent assignee history
2014Patents assigned to LIN HAN-TU (1)· patent assignee history
2014Based in Hsinchu, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
POWERCHIP SEMICONDUCTOR CORP22006–2008
AU OPTRONICS CORP12014
HUANG MING-JENGself12014
IND TECH RES INST12010
LIN HAN-TU12014
Locations
LocationPatentsSpan
Taichung, TW32006–2010
Hsinchu, TW12014