Inventor
Aaron K. Oki
Inventor
Torrance, CA, US
Overview
Patents· 19 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices54%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests18%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%
H01CResistors4%
H01PWaveguides4%
H03BGeneration of oscillations, directly or by frequency-changing, by circuits employing active elements which operate in a non-switching manner4%
H03FAmplifiers4%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
PatentTitleYear
6,680,494'Ultra high speed heterojunction bipolar transistor having a cantilevered base'20046,528,829'Integrated circuit structure having a charge injection barrier'20036,465,289'Method of fabricating monolithic multifunction integrated circuit devices'20026,376,867'Heterojunction bipolar transistor with reduced thermal resistance'20026,072,371'Quenchable VCO for switched band synthesizer applications'20006,037,646'High-frequency GaAs substrate based schottky barrier diodes'20005,986,517'Low-loss air suspended radially combined patch for N-way RF switch'19995,930,636'Method of fabricating high-frequency GaAs substrate-based Schottky barrier diodes'19995,892,248'Double photoresist layer self-aligned heterojuction bipolar transistor'19995,840,612'Method of fabricating very high gain heterojunction bipolar transistors'19985,838,031'Low noise-high linearity HEMT-HBT composite'19985,736,417'Method of fabricating double photoresist layer self-aligned heterojunction bipolar transistor'19985,672,522'Method for making selective subcollector heterojunction bipolar transistors'19975,648,666'Double-epitaxy heterojunction bipolar transistors for high speed performance'19975,631,477'Quaternary collector InAlAs-InGaAlAs heterojunction bipolar transistor'19975,448,087'Heterojunction bipolar transistor with graded base doping'19955,323,138'Reliable thin film resistors for integrated circuit applications'19945,262,335'Method to produce complementary heterojunction bipolar transistors'19935,162,243'Method of producing high reliability heterojunction bipolar transistors'1992Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1992–2003Patents assigned to TRW INC (18)· patent assignee history
1992–2004Based in Torrance, CA, US· patent location history
2004Patents assigned to NORTHROP GRUMMAN CORP (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TRW INC | 18 | 1992–2003 |
| NORTHROP GRUMMAN CORP | 1 | 2004 |
Locations
| Location | Patents | Span |
|---|---|---|
| Torrance, California, US | 19 | 1992–2004 |