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Inventor

Satoshi Okazaki

Inventor
Niigata, JP

Overview

51→
Patents
1984–2019
Patent span
Physics
Primary field (CPC G)

Patents· 51 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G03Fprimary
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices39%
Y10TTechnical subjects covered by former us classification15%
C23CCoating metallic material10%
G01NInvestigating or analysing materials by determining their chemical or physical properties5%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
C08GMacromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds4%
C03CChemical composition of glasses, glazes or vitreous enamels3%
C23FNon-mechanical removal of metallic material from surface3%
B60QArrangement of signalling or lighting devices, the mounting or supporting thereof or circuits therefor, for vehicles in general2%
B62DMotor vehicles2%
PatentTitleYear
10,247,698Gas sensor element, gas sensor, and method for manufacturing gas sensor element201910,145,816Gas sensor element, gas sensor, and method of manufacturing gas sensor element201810,012,611Gas sensor element and gas sensor20189,976,979Gas sensor element, gas sensor, and method of manufacturing gas sensor element20189,739,748'Gas sensor and gas detection element'20178,012,654'Photomask blank and photomask'20118,007,964'Photomask blank and photomask'20118,003,284'Photomask blank and photomask'20117,989,124'Photomask blank and photomask making method'20117,790,339'Photomask blank'20107,771,893'Photomask blank, photomask and fabrication method thereof'20107,767,366'Photomask blank and photomask'20107,767,367'Photomask blank and photomask making method'20107,736,824'Photomask blank, photomask, and method of manufacture'20107,691,546'Photomask blank and photomask'20107,625,676'Photomask blank, photomask and fabrication method thereof'20097,625,677'Half-tone stacked film, photomask-blank, photomask and fabrication method thereof'20097,622,227'Phase-shift photomask-blank, phase-shift photomask and fabrication method thereof'20097,622,228'Halftone phase shift mask blank, and method of manufacture'20097,618,753'Photomask blank, photomask and method for producing those'20097,598,004'Film-depositing target and preparation of phase shift mask blank'20097,556,892'Halftone phase shift mask blank, halftone phase shift mask, and pattern transfer method'20097,425,390'Preparation of halftone phase shift mask blank'20087,419,749'Halftone phase shift mask blank, halftone phase shift mask and their preparation'20087,351,505'Phase shift mask blank, phase shift mask, and pattern transfer method'20087,344,806'Method of producing phase shift mask blank, method of producing phase shift mask, phase shift mask blank, and phase shift mask'20087,329,474'Photomask blank, photomask, and method of manufacture'20087,179,545'Halftone phase shift mask blank, and method of manufacture'20077,179,567'Phase shift mask blank, phase shift mask, and method of manufacture'20077,122,280'Angular substrates'20067,037,625'Phase shift mask blank and method of manufacture'20066,790,129'Method for polishing angular substrates'20046,733,930'Photomask blank, photomask and method of manufacture'20046,727,027'Photomask blank and photomask'20046,666,957'Magnetron sputtering system and photomask blank production method based on the same'20036,641,958'Phase shift mask blank, phase shift mask, and methods of manufacture'20036,589,699'Photomask blank and photomask'20036,514,642'Phase shift mask and method of manufacture'20036,511,778'Phase shift mask blank, phase shift mask and method of manufacture'20036,503,668'Phase shift mask blank, phase shift mask, and method of manufacture'20036,503,669'Photomask blank, photomask and method of manufacture'20036,383,944'Micropatterning method'20026,352,801'Phase shift mask and making process'20026,242,151'Polymers, resist compositions and patterning method'20016,221,989'Polymers and positive resist compositions'20016,218,069'Photosensitive resin composition and making process'20015,773,200'Positive resist composition suitable for lift-off technique and pattern forming method'19985,422,221'Resist compositions'19955,169,440'Silicon carbide membrane for X-ray lithography and method for the preparation thereof'19925,127,330'Method including treatment of ink on a plate to cause hardening at other than the ink outer surface before printing'19924,431,789'Novel organopolysiloxane having alcoholic hydroxy groups and a method for the preparation thereof'1984

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1984–2011Patents assigned to SHINETSU CHEMICAL CO (44)· patent assignee history
1992Patents assigned to DAINIPPON PRINTING CO LTD (1)· patent assignee history
1998–2001Based in Usui-gun, JP· patent location history
2001–2003Based in Nishikamo-gun, JP· patent location history
2003–2010Based in Niigata, JP· patent location history
2008–2011Patents assigned to TOPPAN PRINTING CO LTD (15)· patent assignee history
2008Patents assigned to SHIN ESTU CHEMICAL CO LTD (1)· patent assignee history
2008–2011Based in Joetsu-shi, JP· patent location history
2017–2019Patents assigned to NGK SPARK PLUG CO (5)· patent assignee history
2017–2019Based in Kasugai, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SHINETSU CHEMICAL CO441984–2011
TOPPAN PRINTING CO LTD152008–2011
NGK SPARK PLUG CO52017–2019
DAINIPPON PRINTING CO LTD11992
SHIN ESTU CHEMICAL CO LTD12008
Locations
LocationPatentsSpan
Niigata, JP172003–2010
Joetsu-shi, JP142008–2011
Nishikamo-gun, JP82001–2003
Kasugai, JP52017–2019
Usui-gun, JP21998–2001