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Inventor

Ming Yang

Inventor
Richardson, TX, US

Overview

22→
Patents
1999–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 22 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1017%
G06FElectric digital data processing10%
H10BElectronic memory devices10%
H10DInorganic electric semiconductor devices10%
G06KGraphical data reading7%
G01RMeasuring electric variables5%
H01RElectrically-conductive connections5%
H04LTransmission of digital information, e.g. telegraphic communication5%
H05KPrinted circuits5%
PatentTitleYear
10,698,062Diffusion MRI method for generating a synthetic diffusion image at a high B-value202010,609,141Methods and apparatuses for cluster switching202010,599,337Method and device for writing data and acquiring data in a distributed storage system202010,429,471MRI with variable density sampling20199,483,605'Probabilistic high cycle fatigue (HCF) design optimization process'20168,532,109'Methods and systems for reroute and generation of backward routing information'20138,492,872'On-chip inductors with through-silicon-via fence for Q improvement'20138,292,672'Flash memory device and assembly thereof with improved planar contact portions'20128,204,701'Aeroelastic model using the principal shapes of modes (AMPS)'20127,980,868'Flash memory device with slidable contact module'20117,959,448'Flash memory device with slidable contact module'20117,235,934'Method for controlling operations of a backlight unit of a liquid crystal display'20077,112,532'Process for forming a dual damascene structure'20066,989,578'Inductor Q value improvement'20066,930,049'Endpoint control for small open area by RF source parameter Vdc'20056,803,273'Method to salicide source-line in flash memory with STI'20046,605,540'Process for forming a dual damascene structure'20036,277,720'Silicon nitride dopant diffusion barrier in integrated circuits'20016,274,481'Process sequence to improve DRAM data retention'20016,077,737'Method for forming a DRAM having improved capacitor dielectric layers'20005,972,796'In-situ barc and nitride etch process'19995,914,279'Silicon nitride sidewall and top surface layer separating conductors'1999

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1999–2006Patents assigned to TEXAS INSTRUMENTS INC (8)· patent assignee history
1999–2006Based in Richardson, TX, US· patent location history
2006–2013Based in Hsinchu, TW· patent location history
2011–2012Patents assigned to DATA TECHNOLOGY SUZHOU CO LTD A (3)· patent assignee history
2012–2013Patents assigned to YANG MING-TA (4)· patent assignee history
2012–2016Based in Carlisle, MA, US· patent location history
2019–2020Patents assigned to KONINKLIJKE PHILIPS NV (2)· patent assignee history
2019–2020Based in Suzhou, CN· patent location history
2020Patents assigned to ALIBABA GROUP HOLDING LTD (2)· patent assignee history
2020Based in Hangzhou, CN· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TEXAS INSTRUMENTS INC81999–2006
YANG MING-TAself42012–2013
DATA TECHNOLOGY SUZHOU CO LTD A32011–2012
ALIBABA GROUP HOLDING LTD22020
KONINKLIJKE PHILIPS NV22019–2020
Locations
LocationPatentsSpan
Richardson, Texas, US81999–2006
Suzhou, CN22019–2020
Hangzhou, CN22020
Carlisle, Massachusetts, US22012–2016
Hsinchu, TW22006–2013