LexDanaLexDanabeta
Inventor

Hirofumi Kan

Inventor
Hamamatsu, JP

Overview

71→
Patents
1976–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 71 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Sprimary
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light23%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution12%
H01MProcesses or means, e.g. batteries, for the direct conversion of chemical energy into electrical energy8%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
H01JElectric discharge tubes or discharge lamps7%
G21BFusion reactors5%
H05HPlasma technique5%
G02BOptical elements, systems or apparatus4%
H10HInorganic light-emitting semiconductor devices having potential barriers3%
B23KSoldering or unsoldering2%
PatentTitleYear
10,957,930Solid alkaline fuel cell including inorganic solid electrolyte enabled to permeate water202110,862,138Electrochemical cell and cell stack device202010,727,524Cell stack device202010,593,977Solid alkaline fuel cell202010,490,836Power generation method for solid alkaline fuel cell201910,206,272Method for manufacturing tracer-encapsulated solid pellet for magnetic-confinement fusion201910,166,086Dental therapy apparatus20199,953,729Radiation generating apparatus and radiation generating method20189,882,354'Semiconductor laser device'20189,805,829'Laser fusion device and nuclear fusion generating method'20179,672,944'Method of determining nuclear fusion irradiation coordinates, device for determining nuclear fusion irradiation coordinates, and nuclear fusion device'20179,363,882'Neutron generation target, device, and method'20169,230,694'Method of determining nuclear fusion irradiation coordinates, device for determining nuclear fusion irradiation coordinates, and nuclear fusion device'20169,088,022'Fuel cell'20158,879,592'Semiconductor laser device'20148,765,311'Fuel cell'20148,755,103'Plasma shutter forming apparatus and forming method'20148,675,702'Laser module'20148,477,824'Semiconductor laser apparatus having collimator lens and path rotator'20138,404,399'Fuel cell'20138,405,034'Scintillator for neutron detection and neutron measurement device'20138,284,345'Silicon light-emitting element'20128,110,836'Semiconductor device'20128,075,726'Method for producing hermetically sealed container for beverage or food'20117,944,956'Heat sink, laser apparatus provided with such heat sink, and laser stack apparatus'20117,885,305'Semiconductor laser device and semiconductor laser device array'20117,885,299'Semiconductor laser equipment'20117,764,432'Laser equipment'20107,759,139'Method for manufacturing silicon device'20107,749,640'Fuel Cell'20107,733,570'Condenser'20107,693,206'Semiconductor laser device including laser array or stack first collimator, path rotator, and an optical element'20107,664,148'Passive Q switch laser device'20107,655,344—20107,653,100'Solid laser module, optical amplifier, and laser oscillator'20107,652,425'Transmission type photocathode including light absorption layer and voltage applying arrangement and electron tube'20107,638,223'Fuel cell'20097,622,694'Laser beam machine'20097,599,414'Laser device'20097,586,968'Heater-attached alkali-encapsulated cell and alkali laser apparatus'20097,577,174'Semiconductor laser device and semiconductor laser element array'20097,567,598'Semiconductor laser equipment'20097,522,643'Semiconductor laser device'20097,502,396'Solid-state laser apparatus'20097,489,447'Optical condenser device'20097,486,710'Semiconductor laser device and method of manufacturing the same'20097,466,023'Semiconductor light emitting device and plant cultivating system'20087,447,248'Semiconductor laser element and semiconductor laser element array'20087,424,044'Semiconductor laser device'20087,372,877'Fiber laser unit'20087,208,874'Transmitting type secondary electron surface and electron tube'20077,045,957'Polycrystal diamond thin film and photocathode and electron tube using the same'20066,950,449'Passively Q-switched laser'20056,931,047'Laser light source'20056,920,164'Semiconductor laser device'20056,917,058'Semiconductor photocathode'20056,895,026'Heat sink and semiconductor laser apparatus and semiconductor laser stack apparatus using the same'20056,831,341'Photocathode having AlGaN layer with specified Mg content concentration'20046,804,275'Heat sink and semiconductor laser apparatus and semiconductor laser stack apparatus using the same'20046,563,264'Photocathode and electron tube'20035,986,387'Transmission type electron multiplier and electron tube provided'19995,982,094'Electron tube with polycrystalline diamond photocathode'19995,959,400'Electron tube having a diamond field emitter'19995,872,804'Solid-state laser amplifier'19995,109,358'Optical flip-flop circuit'19925,068,815'Optical full adder'19915,051,573'Optical logic operation system'19915,034,921'High speed optical memory circuit'19914,875,093'Ultrafast continuous imaging apparatus'19894,183,038'Semiconductor laser device'19803,961,996'Process of producing semiconductor laser device'1976

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1989–2019Patents assigned to HAMAMATSU PHOTONICS KK (56)· patent assignee history
1989–2019Based in Shizuoka, JP· patent location history
1999–2019Based in Hamamatsu, JP· patent location history
2009–2014Based in Tokyo, JP· patent location history
2010–2019Patents assigned to UNIV OSAKA (5)· patent assignee history
2011–2019Patents assigned to KAN HIROFUMI (15)· patent assignee history
2015Based in Kawasaki, JP· patent location history
2016–2018Patents assigned to KAWASHIMA TOSHIYUKI (3)· patent assignee history
2019–2021Patents assigned to NGK INSULATORS LTD (5)· patent assignee history
2019–2021Based in Nagoya, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HAMAMATSU PHOTONICS KK561989–2019
KAN HIROFUMIself152011–2019
NGK INSULATORS LTD52019–2021
UNIV OSAKA52010–2019
KAWASHIMA TOSHIYUKI32016–2018
Locations
LocationPatentsSpan
Hamamatsu, JP491999–2019
Shizuoka, JP91989–2019
Nagoya, JP52019–2021
Tokyo, JP52009–2014
Kawasaki, JP12015