Inventor
Margaret C. Lawson
Inventor
Lagrangeville, NY, US
Overview
Patents· 15 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G03Fprimary
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices48%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests19%
C08FMacromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds6%
G11BInformation storage based on relative movement between record carrier and transducer6%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
Y10TTechnical subjects covered by former us classification6%
B08BCleaning in general3%
G01NInvestigating or analysing materials by determining their chemical or physical properties3%
PatentTitleYear
9,551,696'Cleanability assessment of sublimate from lithography materials'20178,759,220'Patterning process'20148,304,178'Top antireflective coating composition containing hydrophobic and acidic groups'20128,202,678'Wet developable bottom antireflective coating composition and method for use thereof'20127,709,187'High resolution imaging process using an in-situ image modifying layer'20107,700,262'Top coat material and use thereof in lithography processes'20107,608,390'Top antireflective coating composition containing hydrophobic and acidic groups'20097,563,563'Wet developable bottom antireflective coating composition and method for use thereof'20097,335,456'Top coat material and use thereof in lithography processes'20086,927,015'Underlayer compositions for multilayer lithographic processes'20056,818,381'Underlayer compositions for multilayer lithographic processes'20046,534,239'Resist compositions with polymers having pendant groups containing plural acid labile moieties'20036,420,101'Method of reducing post-development defects in and around openings formed in photoresist by use of non-patterned exposure'20026,372,408'Method of reducing post-development defects in and around openings formed in photoresist by use of multiple development/rinse cycles'20025,561,194'Photoresist composition including polyalkylmethacrylate co-polymer of polyhydroxystyrene'1996Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1996–2014Patents assigned to IBM (14)· patent assignee history
1996Based in Dutchess County, NY, US· patent location history
2002Patents assigned to INFINEON TECHNOLOGIES AG (2)· patent assignee history
2002Based in Millbrook, NY, US· patent location history
2003Based in La Grangeville, NY, US· patent location history
2004–2017Based in Lagrangeville, NY, US· patent location history
2012Patents assigned to KHOJASTEH MAHMOUD (2)· patent assignee history
2012Patents assigned to LAWSON MARGARET C (2)· patent assignee history
2012Patents assigned to PATEL KAUSHAL S (2)· patent assignee history
2014Based in Hopewell Junction, NY, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 14 | 1996–2014 |
| INFINEON TECHNOLOGIES AG | 2 | 2002 |
| KHOJASTEH MAHMOUD | 2 | 2012 |
| LAWSON MARGARET Cself | 2 | 2012 |
| PATEL KAUSHAL S | 2 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Lagrangeville, New York, US | 10 | 2004–2017 |
| Millbrook, New York, US | 2 | 2002 |
| Hopewell Junction, New York, US | 1 | 2014 |
| La Grangeville, New York, US | 1 | 2003 |
| Dutchess County, New York, US | 1 | 1996 |