Inventor

Jeong-Nam Han

Inventor

Seoul, KR

Overview

2006–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 39 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1025%

H10DInorganic electric semiconductor devices21%

H01LSemiconductor devices15%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%

H10BElectronic memory devices9%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%

H01JElectric discharge tubes or discharge lamps2%

Y10TTechnical subjects covered by former us classification2%

E21BEarth or rock drilling2%

B24BMachines, devices, or processes for grinding or polishing1%

PatentTitleYear

10,892,330FET based synapse network2021 10,821,572Method of controlling a temperature of a chemical mechanical polishing process, temperature control, and CMP apparatus including the temperature control2020 10,424,503Methods of fabricating semiconductor devices including fin-shaped active regions2019 10,297,474Chemical supplier, processing apparatus including the chemical supplier2019 10,192,973Methods of forming semiconductor devices including trench walls having multiple slopes2019 10,090,190Methods of fabricating semiconductor devices including fin-shaped active regions2018 9,812,367'Method for fabricating semiconductor device including replacement process of forming at least one metal gate structure'2017 9,786,764'Fin-FET semiconductor device with a source/drain contact having varying different widths'2017 9,754,806'Apparatus for treating wafers using supercritical fluid'2017 9,728,535'Methods of fabricating semiconductor devices including fin-shaped active regions'2017 9,466,697'Semiconductor devices and methods of manufacturing the same'2016 9,443,979'Semiconductor devices including trench walls having multiple slopes'2016 9,305,825'Methods of fabricating semiconductor devices including fin-shaped active regions'2016 9,136,135'Method of fabricating semiconductor device'2015 9,054,210'Method of fabricating semiconductor device'2015 9,040,415'Semiconductor device and method of fabricating the same'2015 8,951,383'Apparatus for treating wafers using supercritical fluid'2015 8,803,248'Semiconductor devices and methods of manufacturing the same'2014 8,796,107'Methods for fabricating semiconductor devices'2014 8,790,470'Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods'2014 8,709,942'Methods for fabricating semiconductor devices'2014 8,685,272'Composition for etching silicon oxide layer, method for etching semiconductor device using the same, and composition for etching semiconductor device'2014 8,673,724'Methods of fabricating semiconductor devices'2014 8,652,915'Methods of fabricating semiconductor devices using preliminary trenches with epitaxial growth'2014 8,585,917'Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods'2013 8,404,580'Methods for fabricating semiconductor devices'2013 8,110,499'Method of forming a contact structure'2012 8,092,698'Methods of forming semiconductor devices formed by processes including the use of specific etchant solutions'2012 8,084,367'Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods'2011 8,058,180'Methods of fabricating a semiconductor device using a dilute aqueous solution of an ammonia and peroxide mixture'2011 7,985,999'Semiconductor device having capacitor'2011 7,857,939'Apparatus for treating wafers using supercritical fluid'2010 7,820,508'Semiconductor device having capacitor and method of fabricating the same'2010 7,704,828'Method of fabricating a semiconductor device'2010 7,544,985'Semiconductor capacitor structure and method for manufacturing the same'2009 7,498,217'Methods of manufacturing semiconductor memory devices with unit cells having charge trapping layers'2009 7,354,868'Methods of fabricating a semiconductor device using a dilute aqueous solution of an ammonia and peroxide mixture'2008 7,122,478'Method of manufacturing a semiconductor device using a polysilicon etching mask'2006 7,018,892'Semiconductor capacitor structure and method for manufacturing the same'2006

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2006–2020Patents assigned to SAMSUNG ELECTRONICS CO LTD (38)· patent assignee history

2006–2020Based in Seoul, KR· patent location history

2011–2017Patents assigned to HAN JEONG-NAM (17)· patent assignee history

2011–2015Patents assigned to HONG CHANG-KI (7)· patent assignee history

2013–2017Patents assigned to YOON BO-UN (8)· patent assignee history

2013–2016Patents assigned to PARK SANG-JINE (7)· patent assignee history

2021Based in Fishkill, NY, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
SAMSUNG ELECTRONICS CO LTD	38	2006–2020
HAN JEONG-NAMself	17	2011–2017
YOON BO-UN	8	2013–2017
HONG CHANG-KI	7	2011–2015
PARK SANG-JINE	7	2013–2016

Locations

Location	Patents	Span
Seoul, KR	38	2006–2020
Fishkill, New York, US	1	2021