Inventor
Naofumi Ohashi
Inventor
Toyama, JP
Overview
Patents· 57 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1029%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1017%
H01LSemiconductor devices14%
C23CCoating metallic material12%
H10DInorganic electric semiconductor devices6%
H01JElectric discharge tubes or discharge lamps6%
G09GArrangements or circuits for control of indicating devices using static means to present variable information4%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices2%
B24BMachines, devices, or processes for grinding or polishing1%
PatentTitleYear
11,043,377Method of manufacturing semiconductor device202111,037,823Method of manufacturing semiconductor device202111,027,970Method of manufacturing semiconductor device202110,818,476Substrate processing apparatus202010,685,832Substrate processing apparatus202010,651,068Method of manufacturing semiconductor device by setting process chamber to maintenance enable state202010,541,170Substrate processing apparatus and method of manufacturing semiconductor device202010,533,250Method of manufacturing semiconductor device202010,503,152Method of manufacturing semiconductor device201910,453,720Method of manufacturing semiconductor device201910,424,520Method of manufacturing semiconductor device201910,340,237Method of manufacturing semiconductor device201910,224,227Method of processing substrate201910,156,798Substrate processing apparatus201810,128,128Method of manufacturing semiconductor device having air gap between wirings for low dielectric constant201810,115,583Method of manufacturing semiconductor device201810,014,171Method of manufacturing semiconductor device20189,991,179Method of manufacturing semiconductor device20189,966,261Method of manufacturing semiconductor device20189,786,493'Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium'20179,735,068'Method of manufacturing semiconductor device'20179,728,431'Method of manufacturing semiconductor device'20179,698,050'Method of manufacturing semiconductor device'20179,666,477'Method of manufacturing semiconductor device'20179,484,249'Method of manufacturing semiconductor device'20169,431,220'Substrate processing apparatus and substrate processing system'20169,396,930'Substrate processing apparatus'20169,355,866'Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium'20169,018,689'Substrate processing apparatus and method of manufacturing semiconductor device'20158,129,275'Process for manufacturing semiconductor integrated circuit device'20127,955,948'Manufacturing method of semiconductor device'20117,659,201'Process for manufacturing semiconductor integrated circuit device'20107,538,038'Method of removing resist, semiconductor device thereby and method of manufacturing a semiconductor device'20097,510,970'Process for manufacturing semiconductor integrated circuit device'20097,205,030'Method for forming porous film'20077,064,060'Method for manufacturing semiconductor device'20067,053,487'Semiconductor device'20066,908,847'Method of manufacturing a semiconductor device having an interconnect embedded in an insulating film'20056,864,169'Semiconductor integrated circuit device and manufacturing method of semiconductor integrated circuit device'20056,855,035'Apparatus and method for producing substrate with electrical wire thereon'20056,849,535'Semiconductor integrated circuit device and manufacturing method of semiconductor integrated circuit device'20056,815,330'Semiconductor integrated circuit device and manufacturing method of semiconductor integrated circuit device'20046,800,557'Process for manufacturing semiconductor integrated circuit device'20046,797,606'Semiconductor integrated circuit device and manufacturing method of semiconductor integrated circuit device'20046,797,609'Semiconductor integrated circuit device and manufacturing method of semiconductor integrated circuit device'20046,756,679'Semiconductor integrated circuit device and manufacturing method of semiconductor integrated circuit device'20046,730,590'Semiconductor integrated circuit device and fabrication process thereof'20046,716,749'Semiconductor integrated circuit device and manufacturing method of semiconductor integrated circuit device'20046,638,854'Semiconductor device and method for manufacturing the same'20036,561,875'Apparatus and method for producing substrate with electrical wire thereon'20036,531,400'Process for manufacturing semiconductor integrated circuit device'20036,509,273'Method for manufacturing a semiconductor device'20036,458,674'Process for manufacturing semiconductor integrated circuit device'20026,403,459'Fabrication process of semiconductor integrated circuit device'20026,376,345'Process for manufacturing semiconductor integrated circuit device'20026,326,299'Method for manufacturing a semiconductor device'20016,184,143'Semiconductor integrated circuit device and fabrication process thereof'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001–2004Patents assigned to HITACHI LTD (10)· patent assignee history
2001–2005Based in Hanno, JP· patent location history
2001–2012Based in Hannou, JP· patent location history
2004–2010Patents assigned to RENESAS TECH CORP (12)· patent assignee history
2005–2006Based in Tsukuba, JP· patent location history
2006–2007Patents assigned to SANYO ELECTRIC CO (2)· patent assignee history
2006–2011Based in Tokyo, JP· patent location history
2011–2020Patents assigned to HITACHI INT ELECTRIC INC (21)· patent assignee history
2015–2021Based in Toyama, JP· patent location history
2019–2021Patents assigned to KOKUSAI ELECTRIC CORP (12)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HITACHI INT ELECTRIC INC | 21 | 2011–2020 |
| KOKUSAI ELECTRIC CORP | 12 | 2019–2021 |
| RENESAS TECH CORP | 12 | 2004–2010 |
| HITACHI LTD | 10 | 2001–2004 |
| SANYO ELECTRIC CO | 2 | 2006–2007 |
Locations
| Location | Patents | Span |
|---|---|---|
| Toyama, JP | 29 | 2015–2021 |
| Hanno, JP | 12 | 2001–2005 |
| Hannou, JP | 10 | 2001–2012 |
| Tokyo, JP | 4 | 2006–2011 |
| Tsukuba, JP | 2 | 2005–2006 |