Inventor
Peizhen HONG
Inventor
CN
Overview
Patents· 6 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices23%
H10DInorganic electric semiconductor devices23%
H01LSemiconductor devices19%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1012%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%
Y02DClimate change mitigation technologies in information and communication technologies [ict], i.e. information and communication technologies aiming at the reduction of their own energy use12%
PatentTitleYear
12,356,616Openings layout of three-dimensional memory device202512,232,320Word line structure of three-dimensional memory device202511,903,195Openings layout of three-dimensional memory device202411,792,989Word line structure of three-dimensional memory device202311,574,919Openings layout of three-dimensional memory device202311,222,903Word line structure of three-dimensional memory device2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2025Patents assigned to YANGTZE MEMORY TECH CO LTD (6)· patent assignee history
2022–2025Based in CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| YANGTZE MEMORY TECH CO LTD | 6 | 2022–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| CN | 6 | 2022–2025 |