Inventor
Eiji Kamiya
Inventor
Yokkaichi, JP
Overview
Patents· 17 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices52%
F17CVessels for containing or storing compressed, liquefied or solidified gases16%
H10DInorganic electric semiconductor devices8%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution8%
E04BGeneral building constructions4%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
PatentTitleYear
9,890,904'Cryogenic tank'20189,857,030'Cryogenic tank with anchored membrane'20189,803,353'Membrane anchor mechanism'20179,732,908'Cryogenic tank'20178,674,431'Non-volatile semiconductor memory device and method of manufacturing the same'20148,138,043'Non-volatile semiconductor memory device and method of manufacturing the same'20127,948,026'Non-volatile semiconductor memory device and method of manufacturing the same'20117,678,663'Non-volatile semiconductor memory device and method of manufacturing the same'20107,432,154'Non-volatile semiconductor memory device and method of manufacturing the same'20087,297,594'Non-volatile semiconductor memory device and method of manufacturing the same'20077,297,599'Method of fabricating semiconductor device'20077,195,968'Method of fabricating semiconductor device'20076,943,074'Nonvolatile semiconductor memory device having a two-layer gate structure and method for manufacturing the same'20056,897,524'Non-volatile semiconductor memory device and method of manufacturing the same'20056,534,867'Semiconductor device, semiconductor element and method for producing same'20036,080,624'Nonvolatile semiconductor memory and method for manufacturing the same'20005,838,615'Nonvolatile semiconductor memory device having reduced source line resistance'1998Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1998Patents assigned to TOKYO SHIBAURA ELECTRIC CO (1)· patent assignee history
2000–2014Patents assigned to TOSHIBA KK (12)· patent assignee history
2000Based in Kawasaki, JP· patent location history
2003–2005Based in Kamakura, JP· patent location history
2005–2014Based in Yokkaichi, JP· patent location history
2007Based in Mie, JP· patent location history
2012–2014Patents assigned to KAMIYA EIJI (2)· patent assignee history
2017–2018Patents assigned to IHI CORP (4)· patent assignee history
2017–2018Based in Tokyo, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOSHIBA KK | 12 | 2000–2014 |
| IHI CORP | 4 | 2017–2018 |
| KAMIYA EIJIself | 2 | 2012–2014 |
| TOKYO SHIBAURA ELECTRIC CO | 1 | 1998 |
Locations
| Location | Patents | Span |
|---|---|---|
| Yokkaichi, JP | 7 | 2005–2014 |
| Tokyo, JP | 4 | 2017–2018 |
| Mie, JP | 2 | 2007 |
| Kamakura, JP | 2 | 2003–2005 |
| Kawasaki, JP | 1 | 2000 |