Inventor
Whonchee Lee
Inventor
Boise, ID, US
Overview
Patents· 78 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1028%
B24BMachines, devices, or processes for grinding or polishing12%
B23HWorking of metal by the action of a high concentration of electric current on a workpiece using an electrode which takes the place of a tool10%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
C25FProcesses for the electrolytic removal of materials from objects8%
H10DInorganic electric semiconductor devices5%
C23FNon-mechanical removal of metallic material from surface3%
C25DProcesses for the electrolytic or electrophoretic production of coatings3%
B24DTools for grinding, buffing or sharpening2%
B81BMicrostructural devices or systems, e.g. micromechanical devices2%
PatentTitleYear
10,986,265Electronic device and control method thereof20219,593,431'Electroplating systems'20179,040,424'Methods of forming single crystal silicon structures and semiconductor device structures including single crystal silicon structures'20158,974,655'Methods of planarization and electro-chemical mechanical polishing processes'20158,603,319'Methods and systems for removing materials from microfeature workpieces with organic and/or non-aqueous electrolytic media'20138,450,214'Methods of etching single crystal silicon'20138,419,906'Electroplating systems'20138,294,246'Semiconductor structures including square cuts in single crystal silicon and method of forming same'20128,159,050'Single crystal silicon structures'20128,101,060'Methods and apparatuses for electrochemical-mechanical polishing'20128,048,756'Method for removing metal layers formed outside an aperture of a BPSG layer utilizing multiple etching processes including electrochemical-mechanical polishing'20118,048,287'Method for selectively removing conductive material from a microelectronic substrate'20117,977,251'High selectivity BPSG to TEOS etchant'20117,973,388'Semiconductor structures including square cuts in single crystal silicon'20117,972,485'Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate'20117,709,341'Methods of shaping vertical single crystal silicon walls and resulting structures'20107,708,875'Noncontact localized electrochemical deposition of metal thin films'20107,700,436'Method for forming a microelectronic structure having a conductive material and a fill material with a hardness of 0.04 GPA or higher within an aperture'20107,670,466'Methods and apparatuses for electrochemical-mechanical polishing'20107,628,932'Wet etch suitable for creating square cuts in si'20097,618,528'Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate'20097,604,729'Methods and apparatus for selectively removing conductive material from a microelectronic substrate'20097,588,677'Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate'20097,566,391'Methods and systems for removing materials from microfeature workpieces with organic and/or non-aqueous electrolytic media'20097,560,017'Methods and apparatus for electrically detecting characteristics of a microelectronic substrate and/or polishing medium'20097,524,410'Methods and apparatus for removing conductive material from a microelectronic substrate'20097,435,324'Noncontact localized electrochemical deposition of metal thin films'20087,378,353'High selectivity BPSG to TEOS etchant'20087,256,138'Method and composition for selectively etching against cobalt silicide'20077,220,166'Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate'20077,192,335'Method and apparatus for chemically, mechanically, and/or electrolytically removing material from microelectronic substrates'20077,160,176'Methods and apparatus for electrically and/or chemically-mechanically removing conductive material from a microelectronic substrate'20077,153,195'Methods and apparatus for selectively removing conductive material from a microelectronic substrate'20067,153,777'Methods and apparatuses for electrochemical-mechanical polishing'20067,153,410'Methods and apparatus for electrochemical-mechanical processing of microelectronic workpieces'20067,138,072'Methods and apparatuses for planarizing microelectronic substrate assemblies'20067,134,934'Methods and apparatus for electrically detecting characteristics of a microelectronic substrate and/or polishing medium'20067,112,121'Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate'20067,112,122'Methods and apparatus for removing conductive material from a microelectronic substrate'20067,094,131'Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material'20067,083,700'Methods and apparatuses for planarizing microelectronic substrate assemblies'20067,078,308'Method and apparatus for removing adjacent conductive and nonconductive materials of a microelectronic substrate'20066,903,018'Methods and apparatuses for planarizing microelectronic substrate assemblies'20056,881,127'Method and apparatuses for planarizing microelectronic substrate assemblies'20056,867,448'Electro-mechanically polished structure'20056,825,570'Resistance-reducing conductive adhesives for attachment of electronic components'20046,783,694'Composition for selectively etching against cobalt silicide'20046,759,343'Method and composition for selectively etching against cobalt silicide'20046,693,320'Capacitor structures with recessed hemispherical grain silicon'20046,660,180'Compositions for etching silicon with high selectivity to oxides and methods of using same'20036,632,719'Capacitor structures with recessed hemispherical grain silicon'20036,605,539'Electro-mechanical polishing of platinum container structure'20036,544,435'Composition and method of formation and use therefor in chemical-mechanical polishing'20036,541,390'Method and composition for selectively etching against cobalt silicide'20036,533,893'Method and apparatus for chemical-mechanical planarization of microelectronic substrates with selected planarizing liquids'20036,458,624'Resistance-reducing conductive adhesives for attachment of electronic components'20026,436,831'Methods of forming insulative plugs and oxide plug forming methods'20026,409,936'Composition and method of formation and use therefor in chemical-mechanical polishing'20026,399,504'Methods and etchants for etching oxides of silicon with low selectivity'20026,391,793'Compositions for etching silicon with high selectivity to oxides and methods of using same'20026,383,934'Method and apparatus for chemical-mechanical planarization of microelectronic substrates with selected planarizing liquids'20026,346,750'Resistance-reducing conductive adhesives for attachment of electronic components'20026,232,232'High selectivity BPSG to TEOS etchant'20016,225,232'Semiconductor processing methods, and methods of forming capacitor constructions'20016,210,489'Methods and etchants for etching oxides of silicon with low selectivity'20016,200,909'Method for selective etching of antireflective coatings'20016,140,245'Semiconductor processing methods, and methods of forming capacitor constructions'20006,103,637'Method for selective etching of antireflective coatings'20006,093,652'Methods of forming insulative plugs, and oxide plug forming methods'20006,087,273'Process for selectively etching silicon nitride in the presence of silicon oxide'20006,074,960'Method and composition for selectively etching against cobalt silicide'20006,029,680'Method for in situ removal of particulate residues resulting from cleaning treatments'20005,990,019'Selective etching of oxides'19995,981,401'Method for selective etching of anitreflective coatings'19995,885,903'Process for selectively etching silicon nitride in the presence of silicon oxide'19995,770,263'Method for in situ removal of particulate residues resulting from hydrofluoric acid cleaning treatments'19985,716,535'Methods and etchants for etching oxides of silicon with low selectivity'19985,685,951'Methods and etchants for etching oxides of silicon with low selectivity in a vapor phase system'1997Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1997–2017Patents assigned to MICRON TECHNOLOGY INC (72)· patent assignee history
1997–2017Based in Boise, ID, US· patent location history
2011–2012Patents assigned to ROUND ROCK RES LLC (4)· patent assignee history
2012–2015Patents assigned to LEE WHONCHEE (7)· patent assignee history
2012–2015Patents assigned to FUCSKO JANOS (4)· patent assignee history
2012–2015Patents assigned to WELLS DAVID H (4)· patent assignee history
2021Based in Suwon-si, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MICRON TECHNOLOGY INC | 72 | 1997–2017 |
| LEE WHONCHEEself | 7 | 2012–2015 |
| FUCSKO JANOS | 4 | 2012–2015 |
| ROUND ROCK RES LLC | 4 | 2011–2012 |
| WELLS DAVID H | 4 | 2012–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Boise, ID, US | 77 | 1997–2017 |
| Suwon-si, KR | 1 | 2021 |