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Inventor

BEICHAO ZHANG

Inventor
CN

Overview

1→
Patents
2026
Patent span
Electricity
Primary field (CPC H)

Patents· 1 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices20%
H10DInorganic electric semiconductor devices20%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1020%
Y02PClimate change mitigation technologies in the production or processing of goods20%
PatentTitleYear
12,538,765Method of making soi device from bulk silicon substrate and soi device2026

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2026Patents assigned to HANGZHOU HFC SEMICONDUCTOR CO (1)· patent assignee history
2026Based in CN· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HANGZHOU HFC SEMICONDUCTOR CO12026
Locations
LocationPatentsSpan
CN12026