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Inventor

Yi-Ruei Jhan

Inventor
Hsinchu, TW

Overview

4→
Patents
2015–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 4 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices31%
H10DInorganic electric semiconductor devices31%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1023%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%
PatentTitleYear
11,056,393Method for FinFET fabrication and structure thereof202110,950,434Methods of reducing gate spacer loss during semiconductor manufacturing202110,847,633Method for forming semiconductor device20209,076,764'Tunneling transistor with asymmetric gate'2015

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2015Patents assigned to NAT UNIV TSING HUA (1)· patent assignee history
2015–2021Based in Hsinchu, TW· patent location history
2020–2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (3)· patent assignee history
2020–2021Based in Keelung, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG CO LTD32020–2021
NAT UNIV TSING HUA12015
Locations
LocationPatentsSpan
Hsinchu, TW22015–2021
Keelung, TW22020–2021