Inventor
Yi Song
Inventor
Albany, NY, US
Overview
Patents· 16 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices29%
H01LSemiconductor devices26%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
H04LTransmission of digital information, e.g. telegraphic communication7%
B82YSpecific uses or applications of nanostructures5%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
PatentTitleYear
10,832,907Gate-all-around field-effect transistor devices having source/drain extension contacts to channel layers for reduced parasitic resistance202010,833,180Self-aligned tunneling field effect transistors202010,804,262Cointegration of FET devices with decoupling capacitor202010,770,361Controlling active fin height of FinFET device using etch protection layer to prevent recess of isolation layer during gate oxide removal202010,749,011Area selective cyclic deposition for VFET top spacer202010,672,668Dual width finned semiconductor structure202010,665,514Controlling active fin height of FinFET device using etch protection layer to prevent recess of isolation layer during gate oxide removal202010,490,447Airgap formation in BEOL interconnect structure using sidewall image transfer201910,461,154Bottom isolation for nanosheet transistors on bulk substrate201910,446,686Asymmetric dual gate fully depleted transistor201910,212,083Openflow data channel and control channel separation20199,699,063'Transitioning a routing switch device between network protocols'20179,374,308'Openflow switch mode transition processing'20169,224,809'Field effect transistor structure comprising a stack of vertically separated channel nanowires'20158,361,869'Method for manufacturing suspended fin and gate-all-around field effect transistor'20137,960,235'Method for manufacturing a MOSFET with a surrounding gate of bulk Si'2011Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2011Patents assigned to INST OF MICROELECTRONICS CHINESE ACADEMY (1)· patent assignee history
2011–2013Based in Beijing, CN· patent location history
2013Patents assigned to INST OF MICROELECTRONICS CAS (1)· patent assignee history
2013Patents assigned to SONG YI (1)· patent assignee history
2015Based in Urbana, IL, US· patent location history
2016–2019Patents assigned to LENOVO ENTPR SOLUTIONS SINGAPORE PTE LTD (2)· patent assignee history
2016–2019Based in Wuxi, CN· patent location history
2017–2020Patents assigned to IBM (11)· patent assignee history
2019–2020Based in Albany, NY, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 11 | 2017–2020 |
| LENOVO ENTPR SOLUTIONS SINGAPORE PTE LTD | 2 | 2016–2019 |
| INST OF MICROELECTRONICS CAS | 1 | 2013 |
| INST OF MICROELECTRONICS CHINESE ACADEMY | 1 | 2011 |
| SONG YIself | 1 | 2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Albany, New York, US | 10 | 2019–2020 |
| Wuxi, CN | 3 | 2016–2019 |
| Beijing, CN | 2 | 2011–2013 |
| Urbana, Illinois, US | 1 | 2015 |