Inventor
Akira Kagoshima
Inventor
Kudamatsu, JP
Overview
Patents· 43 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1032%
H01JElectric discharge tubes or discharge lamps26%
G05BControl or regulating systems in general12%
Y02PClimate change mitigation technologies in the production or processing of goods8%
G01JMeasurement of intensity, velocity, spectral content, polarisation, phase or pulse characteristics of infrared, visible or ultraviolet light6%
H01LSemiconductor devices5%
G01NInvestigating or analysing materials by determining their chemical or physical properties3%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems1%
C23CCoating metallic material1%
PatentTitleYear
10,872,750Plasma processing apparatus and plasma processing system202010,734,207Plasma processing apparatus and analysis method for analyzing plasma processing data202010,510,519Plasma processing apparatus and data analysis apparatus201910,408,762Plasma processing apparatus, plasma processing method and plasma processing analysis method201910,262,840Plasma processing apparatus201910,262,842Analysis method and semiconductor etching apparatus201910,184,182Plasma processing apparatus201910,153,217Plasma processing apparatus and plasma processing method20189,824,866'Plasma processing method'20179,464,936'Plasma processing apparatus and analyzing apparatus'20169,443,704'Data analysis method for plasma processing apparatus, plasma processing method and plasma processing apparatus'20169,324,588'Data analysis method for plasma processing apparatus, plasma processing method and plasma processing apparatus'20169,110,461'Semiconductor manufacturing equipment'20159,091,595'Analysis method, analysis device, and etching processing system'20158,992,721'Plasma processing apparatus'20158,924,001'Etching apparatus, control simulator, and semiconductor device manufacturing method'20148,828,184'Plasma processing apparatus and plasma processing method'20148,784,677'Plasma processing apparatus and plasma processing method'20148,731,706'Vacuum processing apparatus'20148,282,849'Etching process state judgment method and system therefor'20128,083,960'Etching endpoint determination method'20117,601,240'Disturbance-free, recipe-controlled plasma processing system and method'20097,473,332'Method for processing semiconductor'20097,343,217'System for monitoring and controlling a semiconductor manufacturing apparatus using prediction model equation'20087,330,346'Etching apparatus, method for measuring self-bias voltage, and method for monitoring etching apparatus'20087,166,480'Particle control device and particle control method for vacuum processing apparatus'20077,122,096'Method and apparatus for processing semiconductor'20067,107,115'Method for controlling semiconductor processing apparatus'20067,062,347'Maintenance method and system for plasma processing apparatus'20067,058,470'Method of monitoring and/or controlling a semiconductor manufacturing apparatus and a system therefor'20067,010,374'Method for controlling semiconductor processing apparatus'20066,939,435'Plasma processing apparatus and processing method'20056,916,396'Etching system and etching method'20056,908,529'Plasma processing apparatus and method'20056,881,352'Disturbance-free, recipe-controlled plasma processing method'20056,830,649'Apparatus and method for producing semiconductors'20046,828,165'Semiconductor plasma processing apparatus with first and second processing state monitoring units'20046,776,872'Data processing apparatus for semiconductor processing apparatus'20046,771,481'Plasma processing apparatus for processing semiconductor wafer using plasma'20046,745,096'Maintenance method and system for plasma processing apparatus etching and apparatus'20046,733,618'Disturbance-free, recipe-controlled plasma processing system and method'20046,706,543'Method of monitoring and/or controlling a semiconductor manufacturing apparatus and a therefor'20046,616,759'Method of monitoring and/or controlling a semiconductor manufacturing apparatus and a system therefor'2003Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2003–2009Patents assigned to HITACHI LTD (13)· patent assignee history
2003–2019Based in Kudamatsu, JP· patent location history
2004–2020Patents assigned to HITACHI HIGH TECH CORP (31)· patent assignee history
2011–2015Patents assigned to KAGOSHIMA AKIRA (8)· patent assignee history
2011–2015Patents assigned to SHIRAISHI DAISUKE (7)· patent assignee history
2014–2015Patents assigned to INOUE SATOMI (4)· patent assignee history
2016–2020Based in Tokyo, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HITACHI HIGH TECH CORP | 31 | 2004–2020 |
| HITACHI LTD | 13 | 2003–2009 |
| KAGOSHIMA AKIRAself | 8 | 2011–2015 |
| SHIRAISHI DAISUKE | 7 | 2011–2015 |
| INOUE SATOMI | 4 | 2014–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kudamatsu, JP | 33 | 2003–2019 |
| Tokyo, JP | 10 | 2016–2020 |