Inventor
Ralph N. Wall
Inventor
Beaverton, OR, US
Overview
Patents· 19 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices23%
H01LSemiconductor devices20%
H03HImpedance networks, e.g. resonant circuits20%
Y10TTechnical subjects covered by former us classification13%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
B23KSoldering or unsoldering3%
B81BMicrostructural devices or systems, e.g. micromechanical devices3%
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems3%
H01CResistors3%
H02HEmergency protective circuit arrangements3%
PatentTitleYear
11,056,581Trench-gate insulated-gate bipolar transistors202110,727,326Trench-gate insulated-gate bipolar transistors (IGBTs)202010,546,948Electronic device including an insulated gate bipolar transistor having a field-stop region and a process of forming the same202010,388,726Accumulation enhanced insulated gate bipolar transistor (AEGT) and methods of use thereof201910,128,330Semiconductor device with a buried junction layer having an interspersed pattern of doped and counter-doped materials20189,564,424'ESD device and structure therefor'20179,337,178'Method of forming an ESD device and structure therefor'20169,111,758'Semiconductor component and method of manufacture'20158,952,768'Optimal acoustic impedance materials for polished substrate coating to suppress passband ripple in BAW resonators and filters'20158,522,411'Method to control BAW resonator top electrode edge during patterning'20138,512,800'Optimal acoustic impedance materials for polished substrate coating to suppress passband ripple in BAW resonators and filters'20138,201,311'Process of making a BAW resonator bi-layer top electrode'20127,960,200'Orientation-dependent etching of deposited AlN for structural use and sacrificial layers in MEMS'20117,737,612'BAW resonator bi-layer top electrode with zero etch undercut'20107,612,488'Method to control BAW resonator top electrode edge during patterning'20097,600,303'BAW resonator bi-layer top electrode with zero etch undercut'20097,567,024'Methods of contacting the top layer of a BAW resonator'20096,919,984'Metal trim mirror for optimized thin film resistor laser trimming'20056,855,585'Integrating multiple thin film resistors'2005Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2005–2011Patents assigned to MAXIM INTEGRATED PRODUCTS (7)· patent assignee history
2005–2015Based in Beaverton, OR, US· patent location history
2012–2015Patents assigned to TRIQUINT SEMICONDUCTOR INC (4)· patent assignee history
2012–2013Patents assigned to WALL RALPH N (3)· patent assignee history
2012–2013Patents assigned to BOUCHE GUILLAUME (2)· patent assignee history
2015–2021Based in Pocatello, ID, US· patent location history
2017–2021Patents assigned to SEMICONDUCTOR COMPONENTS IND LLC (6)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MAXIM INTEGRATED PRODUCTS | 7 | 2005–2011 |
| SEMICONDUCTOR COMPONENTS IND LLC | 6 | 2017–2021 |
| TRIQUINT SEMICONDUCTOR INC | 4 | 2012–2015 |
| WALL RALPH Nself | 3 | 2012–2013 |
| BOUCHE GUILLAUME | 2 | 2012–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Beaverton, OR, US | 11 | 2005–2015 |
| Pocatello, ID, US | 8 | 2015–2021 |