Inventor
RUO FANG ZHANG
Inventor
CN
Overview
Patents· 5 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices42%
G11CStatic stores25%
H01LSemiconductor devices17%
H10DInorganic electric semiconductor devices17%
PatentTitleYear
12,446,2173D NAND memory device and method of forming the same202511,805,643Method of fabrication thereof a multi-level vertical memory device including inter-level channel connector202311,737,2633D NAND memory device and method of forming the same202311,502,094Multi-level vertical memory device including inter-level channel connector202211,145,6673D NAND memory device and method of forming the same2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2025Patents assigned to YANGTZE MEMORY TECH CO LTD (5)· patent assignee history
2021–2025Based in CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| YANGTZE MEMORY TECH CO LTD | 5 | 2021–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| CN | 5 | 2021–2025 |