LexDanaLexDanabeta
Inventor

Masakatsu Takashita

Inventor
Kanagawa, JP

Overview

10→
Patents
1998–2014
Patent span
Electricity
Primary field (CPC H)

Patents· 10 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices82%
H01LSemiconductor devices9%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
PatentTitleYear
8,907,420'Power semiconductor device'20148,283,720'Power semiconductor device'20128,227,854'Semiconductor device having first and second resurf layers'20128,013,360'Semiconductor device having a junction of P type pillar region and N type pillar region'20117,759,732'Power semiconductor device'20107,737,469'Semiconductor device having superjunction structure formed of p-type and n-type pillar regions'20107,622,771'Semiconductor apparatus'20097,605,426'Power semiconductor device'20096,002,153'MOS type semiconductor device with a current detecting function'19995,721,455'Semiconductor device having a thermal resistance detector in the heat radiating path'1998

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1998–2014Patents assigned to TOSHIBA KK (10)· patent assignee history
1998–1999Based in Yokohama, JP· patent location history
2009–2014Based in Kanagawa, JP· patent location history
2012–2014Patents assigned to IZUMISAWA MASARU (3)· patent assignee history
2012–2014Patents assigned to OHTA HIROSHI (3)· patent assignee history
2012–2014Patents assigned to ONO SYOTARO (3)· patent assignee history
2012–2014Patents assigned to SAITO WATARU (3)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOSHIBA KK101998–2014
IZUMISAWA MASARU32012–2014
OHTA HIROSHI32012–2014
ONO SYOTARO32012–2014
SAITO WATARU32012–2014
Locations
LocationPatentsSpan
Kanagawa, JP82009–2014
Yokohama, JP21998–1999