Inventor

Xiaojiang Guo

Inventor
San Jose, CA, US

Overview

28→
Patents
2015–2021
Patent span
Physics
Primary field (CPC G)

Patents· 28 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores50%
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems18%
G06FElectric digital data processing14%
G05FSystems for regulating electric or magnetic variables6%
H04LTransmission of digital information, e.g. telegraphic communication4%
C04BLime, magnesia2%
C09KMaterials for miscellaneous applications, not provided for elsewhere2%
E21BEarth or rock drilling2%
Y02WClimate change mitigation technologies related to wastewater treatment or waste management2%
PatentTitleYear
10,975,284Well cementation working solution prepared from red mud, slag and waste drilling fluids202110,872,674Regulation of voltage generation systems202010,833,580Stage protection in multi-stage charge pumps202010,802,525Low-voltage bias generator based on high-voltage supply202010,796,773Memory devices including voltage generation systems202010,741,260Systems and methods providing improved calibration of memory control voltage202010,741,263Standby biasing techniques to reduce read disturbs202010,601,313Electronic device with a reconfigurable charging mechanism202010,539,973Low-voltage bias generator based on high-voltage supply202010,515,692Programming memories with stepped programming pulses201910,388,382Methods and apparatus for programming memory201910,381,923Electronic device with a reconfigurable charging mechanism201910,348,527Testing impedance adjustment201910,319,417Apparatuses and methods for mixed charge pumps with voltage regulator circuits201910,163,514Methods of operating a memory during a programming operation201810,090,759Electronic device with a reconfigurable charging mechanism201810,037,797Programming memories with stepped programming pulses including inhibiting a memory cell for a portion of a programming pulse and enabling that memory cell for another portion of that programming pulse20189,912,498'Testing impedance adjustment'20189,847,716Apparatuses and methods for mixed charge pumps with voltage regulator circuits20179,805,801'Memory devices and methods of their operation during a programming operation'20179,779,822'Memory devices and methods of their operation during a programming operation'20179,767,894'Programming memories with stepped programming pulses'20179,722,489'Apparatuses and methods for mixed charge pumps with voltage regulator circuits'20179,710,182'Apparatuses and methods for a memory die architecture including an interface memory'20179,666,282'Program inhibiting in memory devices'20179,640,271'Low-dropout regulator peak current control'20179,612,605'Voltage regulator with current feedback'20179,190,133'Apparatuses and methods for a memory die architecture including an interface memory'2015

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2015–2020Patents assigned to MICRON TECHNOLOGY INC (26)· patent assignee history
2015–2020Based in San Jose, CA, US· patent location history
2020Patents assigned to MICRON TECHNOLGY INC (1)· patent assignee history
2021Patents assigned to CHINA ACADEMY OF BUILDING RES (1)· patent assignee history
2021Patents assigned to CNPC ENG TECH RES & DEV CO LTD (1)· patent assignee history
2021Patents assigned to UNIV SOUTHWEST PETROLEUM (1)· patent assignee history
2021Based in Chengdu, CN· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
MICRON TECHNOLOGY INC262015–2020
CHINA ACADEMY OF BUILDING RES12021
CNPC ENG TECH RES & DEV CO LTD12021
MICRON TECHNOLGY INC12020
UNIV SOUTHWEST PETROLEUM12021
Locations
LocationPatentsSpan
San Jose, California, US272015–2020
Chengdu, CN12021